| 10121861 |
Nanowire transistor fabrication with hardmask layers |
Seiyon Kim, Kelin J. Kuhn, Willy Rachmady, Jack T. Kavalieros |
2018-11-06 |
| 10096474 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more |
2018-10-09 |
| 10096683 |
Group III-N transistor on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner +1 more |
2018-10-09 |
| 10096682 |
III-N devices in Si trenches |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung +3 more |
2018-10-09 |
| 10056456 |
N-channel gallium nitride transistors |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Robert S. Chau |
2018-08-21 |
| 10038054 |
Variable gate width for gate all-around transistors |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros, Robert S. Chau |
2018-07-31 |
| 10032911 |
Wide band gap transistor on non-native semiconductor substrate |
Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung +2 more |
2018-07-24 |
| 10026845 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Jessica S. Kachian, Jack T. Kavalieros +5 more |
2018-07-17 |
| 9922826 |
Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Robert S. Chau, Sanaz K. Gardner |
2018-03-20 |
| 9923087 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel +3 more |
2018-03-20 |