| 10096474 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Niti Goel, Pragyansri Pathi, Matthew V. Metz, Sansaptak Dasgupta +6 more |
2018-10-09 |
| 10096683 |
Group III-N transistor on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +1 more |
2018-10-09 |
| 10096682 |
III-N devices in Si trenches |
Sansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +3 more |
2018-10-09 |
| 10084043 |
High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin |
Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani +4 more |
2018-09-25 |
| 10056456 |
N-channel gallium nitride transistors |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Robert S. Chau |
2018-08-21 |
| 10032911 |
Wide band gap transistor on non-native semiconductor substrate |
Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung +2 more |
2018-07-24 |
| 9922826 |
Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Robert S. Chau, Seung Hoon Sung |
2018-03-20 |
| 9923087 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel +3 more |
2018-03-20 |