| 10096474 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz, Sansaptak Dasgupta +6 more |
2018-10-09 |
| 10026686 |
Decoupling capacitors and arrangements |
Silvio E. Bou-Ghazale, Rany T. Elsayed |
2018-07-17 |
| 9923087 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Sanaz K. Gardner +3 more |
2018-03-20 |
| 9905651 |
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Van H. Le, Marko Radosavljevic, Gilbert Dewey +8 more |
2018-02-27 |
| 9899505 |
Conductivity improvements for III-V semiconductor devices |
Marko Radosavljevic, Prashant Majhi, Jack T. Kavalieros, Wilman Tsai, Niloy Mukherjee +3 more |
2018-02-20 |
| 9865684 |
Nanoscale structure with epitaxial film having a recessed bottom portion |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2018-01-09 |