| 10103263 |
Strained channel region transistors employing source and drain stressors and systems including the same |
Van H. Le, Harold W. Kennel, Willy Rachmady, Jack T. Kavalieros, Niloy Mukherjee |
2018-10-16 |
| 10096709 |
Aspect ratio trapping (ART) for fabricating vertical semiconductor devices |
Van H. Le, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady +4 more |
2018-10-09 |
| 10096682 |
III-N devices in Si trenches |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic +3 more |
2018-10-09 |
| 10090461 |
Oxide-based three-terminal resistive switching logic devices |
Elijah V. Karpov, Prashant Majhi, Brian S. Doyle, Niloy Mukherjee, Uday Shah +1 more |
2018-10-02 |
| 10090405 |
Semiconductor device having group III-V material active region and graded gate dielectric |
Gilbert Dewey, Marko Radosavljevic, Matthew V. Metz |
2018-10-02 |
| 10084058 |
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains |
Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Marko Radosavljevic, Gilbert Dewey +2 more |
2018-09-25 |
| 10074718 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
Gilbert Dewey, Marko Radosavljevic, Benjamin Chu-Kung, Niloy Mukherjee |
2018-09-11 |
| 10050015 |
Multi-device flexible electronics system on a chip (SOC) process integration |
Sansaptak Dasgupta, Niloy Mukherjee, Brian S. Doyle, Marko Radosavljevic, Han Wui Then |
2018-08-14 |
| 10038054 |
Variable gate width for gate all-around transistors |
Willy Rachmady, Van H. Le, Jack T. Kavalieros, Robert S. Chau, Seung Hoon Sung |
2018-07-31 |
| 10032911 |
Wide band gap transistor on non-native semiconductor substrate |
Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung +2 more |
2018-07-24 |
| 10026845 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more |
2018-07-17 |
| 10020371 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey, Niloy Mukherjee +3 more |
2018-07-10 |
| 10008565 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich |
2018-06-26 |
| 9972686 |
Germanium tin channel transistors |
Van H. Le, Willy Rachmady, Roza Kotlyar, Marko Radosavljevic, Han Wui Then +4 more |
2018-05-15 |
| 9952823 |
Architecture for seamless integrated display system |
Johanna M. Swan, Uygar E. Avci, Islam A. Salama |
2018-04-24 |
| 9947780 |
High electron mobility transistor (HEMT) and method of fabrication |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2018-04-17 |
| 9923087 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel +3 more |
2018-03-20 |
| 9911807 |
Strain compensation in transistors |
Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Jack T. Kavalieros |
2018-03-06 |
| 9905651 |
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic, Gilbert Dewey +8 more |
2018-02-27 |
| 9876014 |
Germanium-based quantum well devices |
Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros, Marko Radosavljevic +5 more |
2018-01-23 |
| 9865684 |
Nanoscale structure with epitaxial film having a recessed bottom portion |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2018-01-09 |
| 9859278 |
Bi-axial tensile strained GE channel for CMOS |
Prashant Majhi, Niloy Mukherjee, Willy Rachmady, Robert S. Chau |
2018-01-02 |