Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor devices with germanium-rich active layers and doped transition layers

Semiconductor devices with germanium-rich active layers and doped transition layers

US Patent 10008565 · Granted Jun 26, 2018

Estimated economic value: $24,418,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Dielectric sidewall features for tuning thin film transistor (TFT) parasitics2025
Punch-through interconnect feature to couple upper electrodes of capacitors of m2025
Trench-based quantum dot devices with conductive liners2025
Compositional engineering of Schottky diode2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Capacitor connections in dielectric layers2025
Bilayer memory stacking with computer logic circuits shared between bottom and t2025
Hybrid manufacturing with modified via-last process2025
Integrated circuit devices with FinFETs over gate-all-around transistors2025
Backend memory with air gaps in upper metal layers2025
Top gate recessed channel CMOS thin film transistor and methods of fabrication2025