Issued Patents 2005
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6943127 | CVD plasma assisted lower dielectric constant SICOH film | Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen +2 more | 2005-09-13 |
| 6936551 | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices | Farhad Moghadam, Jun Zhao, Timothy Weidman, Rick J. Roberts, Alexandros T. Demos | 2005-08-30 |
| 6936309 | Hardness improvement of silicon carboxy films | Lihua Li, Tzu-Fang Huang, Ellie Yieh | 2005-08-30 |
| 6921727 | Method for modifying dielectric characteristics of dielectric layers | Kang-Lie Chiang, Mahmoud Dahimene, Xiaoye Zhao, Yan Ye, Gerardo Delgadino +2 more | 2005-07-26 |
| 6913992 | Method of modifying interlayer adhesion | Francimar Schmitt, Son V. Nguyen, Shankar Venkataraman | 2005-07-05 |
| 6914014 | Method for curing low dielectric constant film using direct current bias | Lihua Li, Tzu-Fang Huang, Juan Carlos Rocha-Alvarez, Maosheng Zhao | 2005-07-05 |
| 6911403 | Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics | Lihua Li, Tsutomu Tanaka, Tzu-Fang Huang, Dian Sugiarto, Visweswaren Sivaramakrishnan +2 more | 2005-06-28 |
| 6899763 | Lid cooling mechanism and method for optimized deposition of low-K dielectric using TR methylsilane-ozone based processes | Himansu Pokharna, Tian-Hoe Lim | 2005-05-31 |
| 6890850 | Method of depositing dielectric materials in damascene applications | Ju-Hyung Lee, Ping Xu, Shankar Venkataraman, Fei Han, Ellie Yieh +5 more | 2005-05-10 |
| 6878620 | Side wall passivation films for damascene cu/low k electronic devices | Son V. Nguyen, Srinivas D. Nemani | 2005-04-12 |
| 6858923 | Post-deposition treatment to enhance properties of Si-O-C low films | Frederic Gaillard, Ellie Yieh, Tian-Hoe Lim | 2005-02-22 |
| 6849562 | Method of depositing a low k dielectric barrier film for copper damascene application | Chi-I Lang, Ping Xu, Louis Yang | 2005-02-01 |
| 6838393 | Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide | Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee | 2005-01-04 |