Issued Patents All Time
Showing 26–50 of 88 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11322401 | Reverse contact and silicide process for three-dimensional semiconductor devices | Jeffrey Smith, Lars Liebmann, Daniel Chanemougame, Hiroki Niimi, Subhadeep Kal +2 more | 2022-05-03 |
| 11302588 | Platform and method of operating for integrated end-to-end area-selective deposition process | Robert D. Clark, Jason Mehigan | 2022-04-12 |
| 11264289 | Method for threshold voltage tuning through selective deposition of high-K metal gate (HKMG) film stacks | Jeffrey Smith, Lars Liebmann, Daniel Chanemougame, Mark I. Gardner, H. Jim Fulford +1 more | 2022-03-01 |
| 11264274 | Reverse contact and silicide process for three-dimensional logic devices | Jeffrey Smith, Hiroaki Niimi, Jodi Grzeskowiak, Daniel Chanemougame, Lars Liebmann +2 more | 2022-03-01 |
| 11264254 | Substrate processing tool with integrated metrology and method of using | Robert D. Clark | 2022-03-01 |
| 11251200 | Coaxial contacts for 3D logic and memory | Lars Liebmann, Jeffrey Smith, Anton J. deVilliers | 2022-02-15 |
| 11251077 | Method of forming a semiconductor device with air gaps for low capacitance interconnects | — | 2022-02-15 |
| 11217583 | Architecture design of monolithically integrated 3D CMOS logic and memory | Lars Liebmann, Jeffrey Smith, Anton J. deVilliers | 2022-01-04 |
| 11170992 | Area selective deposition for cap layer formation in advanced contacts | Gerrit J. Leusink | 2021-11-09 |
| 11152268 | Platform and method of operating for integrated end-to-end area-selective deposition process | Robert D. Clark, Jason Mehigan | 2021-10-19 |
| 11152207 | Method of forming titanium nitride films with (200) crystallographic texture | — | 2021-10-19 |
| 11114381 | Power distribution network for 3D logic and memory | Lars Liebmann, Jeffrey Smith, Anton J. deVilliers | 2021-09-07 |
| 11101173 | Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same | Robert D. Clark, Jeffrey Smith, Angelique Raley, Qiang Zhao | 2021-08-24 |
| 11031287 | Fully self-aligned via with selective bilayer dielectric regrowth | Jeffrey Smith | 2021-06-08 |
| 11024535 | Method for filling recessed features in semiconductor devices with a low-resistivity metal | Kai-Hung Yu, David L. O'Meara, Nicholas Joy, Gyanaranjan Pattanaik, Robert D. Clark +3 more | 2021-06-01 |
| 10991881 | Method for controlling the forming voltage in resistive random access memory devices | Steven P. Consiglio, Cory Wajda, Takaaki Tsunomura, Takashi Ando, Paul C. Jamison +3 more | 2021-04-27 |
| 10930764 | Extension region for a semiconductor device | Jeffrey Smith, Nihar Mohanty, Anton J. deVilliers | 2021-02-23 |
| 10923394 | Platform and method of operating for integrated end-to-end fully self-aligned interconnect process | Robert D. Clark, Kai-Hung Yu | 2021-02-16 |
| 10916472 | Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same | Robert D. Clark, Jeffrey Smith, Angelique Raley, Qiang Zhao | 2021-02-09 |
| 10886173 | Platform and method of operating for integrated end-to-end fully self-aligned interconnect process | Robert D. Clark, Kai-Hung Yu | 2021-01-05 |
| 10847424 | Method for forming a nanowire device | Jeffrey Smith, Gerrit J. Leusink | 2020-11-24 |
| 10847363 | Method of selective deposition for forming fully self-aligned vias | — | 2020-11-24 |
| 10833078 | Semiconductor apparatus having stacked gates and method of manufacture thereof | Jeffrey Smith, Anton J. deVilliers, Subhadeep Kal, Gerrit J. Leusink | 2020-11-10 |
| 10790156 | Atomic layer etching using a boron-containing gas and hydrogen fluoride gas | Robert D. Clark | 2020-09-29 |
| 10790149 | Method of forming crystallographically stabilized ferroelectric hafnium zirconium based films for semiconductor devices | Robert D. Clark | 2020-09-29 |