KT

Kandabara Tapily

TL Tokyo Electron Limited: 87 patents #15 of 5,567Top 1%
TL Toyko Electron Limited: 1 patents #1 of 31Top 4%
📍 Albany, NY: #14 of 790 inventorsTop 2%
🗺 New York: #724 of 115,490 inventorsTop 1%
Overall (All Time): #18,685 of 4,157,543Top 1%
88
Patents All Time

Issued Patents All Time

Showing 51–75 of 88 patents

Patent #TitleCo-InventorsDate
10770479 Three-dimensional device and method of forming the same Jeffrey Smith, Anton J. deVilliers, Jodi Grzeskowiak, Kai-Hung Yu 2020-09-08
10734278 Method of protecting low-K layers Hirokazu Aizawa, Karthikeyan Pillai, Nicholas Joy 2020-08-04
10727057 Platform and method of operating for integrated end-to-end self-aligned multi-patterning process Robert D. Clark, Richard A. Farrell, Angelique Raley, Sophie Thibaut 2020-07-28
10586765 Buried power rails Jeffrey Smith, Anton J. deVilliers 2020-03-10
10586734 Method of selective film deposition for forming fully self-aligned vias 2020-03-10
10580650 Method for bottom-up formation of a film in a recessed feature David L. O'Meara, Nihar Mohanty 2020-03-03
10580658 Method for preferential oxidation of silicon in substrates containing silicon and germanium 2020-03-03
10580644 Method and apparatus for selective film deposition using a cyclic treatment 2020-03-03
10529584 In-situ selective deposition and etching for advanced patterning applications 2020-01-07
10529830 Extension region for a semiconductor device Jeffrey Smith, Nihar Mohanty, Anton J. deVilliers 2020-01-07
10522343 Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment Robert D. Clark 2019-12-31
10483109 Self-aligned spacer formation Robert D. Clark 2019-11-19
10460988 Removal method and processing method Takeshi ITATANI, Tadahiro Ishizaka, Kai-Hung Yu, Wanjae Park 2019-10-29
10453681 Method of selective vertical growth of a dielectric material on a dielectric substrate Takashi Matsumoto, Yusaku Kashiwagi, Gerrit J. Leusink 2019-10-22
10453749 Method of forming a self-aligned contact using selective SiO2 deposition Sangcheol Han, Soo Doo Chae 2019-10-22
10453737 Method of filling retrograde recessed features with no voids 2019-10-22
10410858 Selective film deposition using halogen deactivation Takaaki Tsunomura 2019-09-10
10410861 Method of filling retrograde recessed features Gerrit J. Leusink 2019-09-10
10381234 Selective film formation for raised and recessed features using deposition and etching processes 2019-08-13
10378105 Selective deposition with surface treatment Kai-Hung Yu, Takahiro Hakamata, Subhadeep Kal, Gerrit J. Leusink 2019-08-13
10381448 Wrap-around contact integration scheme Robert D. Clark 2019-08-13
10283369 Atomic layer etching using a boron-containing gas and hydrogen fluoride gas Robert D. Clark 2019-05-07
10217825 Metal-insulator-semiconductor (MIS) contacts and method of forming Robert D. Clark 2019-02-26
10217670 Wrap-around contact integration scheme Satoru Nakamura, Soo Doo Chae, Akiteru Ko, Kaoru Maekawa, Gerrit J. Leusink 2019-02-26
10115601 Selective film formation for raised and recessed features using deposition and etching processes 2018-10-30