HK

Hsun-Chung Kuang

TSMC: 89 patents #310 of 12,232Top 3%
Overall (All Time): #18,108 of 4,157,543Top 1%
89
Patents All Time

Issued Patents All Time

Showing 1–25 of 89 patents

Patent #TitleCo-InventorsDate
12424256 Circuit design and layout with high embedded memory density Fa-Shen Jiang, Hsia-Wei Chen, Hai-Dang Trinh, Cheng-Yuan Tsai 2025-09-23
12408448 Deep trench isolation structure and methods for fabrication thereof Bi-Shen Lee, Chia-Wei Hu, Hai-Dang Trinh, Min-Ying Tsai, Ching-I Li +1 more 2025-09-02
12364171 Resistive memory cell with switching layer comprising one or more dopants Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Bi-Shen Lee 2025-07-15
12356631 FeRAM with laminated ferroelectric film and method forming same Bi-Shen Lee, Yi Yang Wei, Hsing-Lien Lin, Cheng-Yuan Tsai, Hai-Dang Trinh 2025-07-08
12349366 Interface film to mitigate size effect of memory device Bi-Shen Lee, Yi Yang Wei, Hai-Dang Trinh, Cheng-Yuan Tsai 2025-07-01
12341019 Anti-oxidation layer to prevent dielectric loss from planarization process Zhen Yu Guan 2025-06-24
12334317 Remote plasma ultraviolet enhanced deposition Hai-Dang Trinh, Fa-Shen Jiang 2025-06-17
12310036 Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same Fa-Shen Jiang, Hsia-Wei Chen, Hai-Dang Trinh 2025-05-20
12302663 Bond pad structure for bonding improvement Chin-Wei Liang, Sheng-Chau Chen, Sheng-Chan Li 2025-05-13
12295267 Semiconductor device and method of manufacturing the same Bi-Shen Lee, Hai-Dang Trinh 2025-05-06
12290003 Conductive structure connection with interconnect structure Sheng-Chau Chen, Cheng-Tai Hsiao, Cheng-Yuan Tsai 2025-04-29
12266604 Techniques to inhibit delamination from flowable gap-fill dielectric Hsing-Lien Lin, Chin-Wei Liang, Ching Ju Yang 2025-04-01
12255062 Integrate rinse module in hybrid bonding platform Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Yuan-Chih Hsieh, Lan-Lin Chao +2 more 2025-03-18
12240076 Conditioner disk, chemical mechanical polishing device, and method Hsien Hua Shen 2025-03-04
12232336 Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same Fa-Shen Jiang, Hsia-Wei Chen, Hai-Dang Trinh 2025-02-18
12232434 Multi-doped data storage structure configured to improve resistive memory cell performance Bi-Shen Lee, Hai-Dang Trinh, Fa-Shen Jiang 2025-02-18
12191250 Method of forming bottom electrode via for memory device Zhen Yu Guan, Sheng-Wen Fu 2025-01-07
12185640 MRAM MTJ with directly coupled top electrode connection Sheng-Chau Chen, Cheng-Tai Hsiao, Cheng-Yuan Tsai 2024-12-31
12183571 Integrated aligned stealth laser for wafer edge trimming process Ming-Tung Wu, Tung-He Chou 2024-12-31
12160995 Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer Bi-Shen Lee, Tzu-Yu Lin, Yi Yang Wei, Hai-Dang Trinh, Cheng-Yuan Tsai 2024-12-03
12137572 Ferroelectric memory device and method of manufacturing the same Yi Yang Wei, Tzu-Yu Lin, Bi-Shen Lee, Hai-Dang Trinh, Hsing-Lien Lin 2024-11-05
12132066 Capping structure along image sensor element to mitigate damage to active layer Chun-Kai Lan, Hai-Dang Trinh 2024-10-29
12127483 Doped sidewall spacer/etch stop layer for memory Bi-Shen Lee, Hai-Dang Trinh, Cheng-Yuan Tsai 2024-10-22
12113090 Bond pad structure for bonding improvement Chin-Wei Liang, Sheng-Chau Chen, Sheng-Chan Li 2024-10-08
12107004 In-situ CMP self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion Zhen Yu Guan 2024-10-01