Issued Patents All Time
Showing 1–25 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12424256 | Circuit design and layout with high embedded memory density | Hsia-Wei Chen, Hsun-Chung Kuang, Hai-Dang Trinh, Cheng-Yuan Tsai | 2025-09-23 |
| 12414484 | RRAM structure | Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin | 2025-09-09 |
| 12364171 | Resistive memory cell with switching layer comprising one or more dopants | Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang, Bi-Shen Lee | 2025-07-15 |
| 12334317 | Remote plasma ultraviolet enhanced deposition | Hai-Dang Trinh, Hsun-Chung Kuang | 2025-06-17 |
| 12310036 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Hsia-Wei Chen, Hai-Dang Trinh, Hsun-Chung Kuang | 2025-05-20 |
| 12295270 | RRAM device with improved performance | Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Bi-Shen Lee | 2025-05-06 |
| 12261197 | Diffusion barrier layer in top electrode to increase break down voltage | Hsing-Lien Lin, Chii-Ming Wu, Hai-Dang Trinh | 2025-03-25 |
| 12239035 | Resistive memory cell having a low forming voltage | Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin, Tzu-Chung Tsai, Bi-Shen Lee | 2025-02-25 |
| 12232434 | Multi-doped data storage structure configured to improve resistive memory cell performance | Bi-Shen Lee, Hai-Dang Trinh, Hsun-Chung Kuang | 2025-02-18 |
| 12232336 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Hsia-Wei Chen, Hai-Dang Trinh, Hsun-Chung Kuang | 2025-02-18 |
| 12225834 | Method for forming semiconductor structure | Hsing-Lien Lin, Hai-Dang Trinh | 2025-02-11 |
| 12218005 | Integrated circuit device | Hsia-Wei Chen, Fu-Ting Sung, Yu-Wen Liao, Wen-Ting Chu, Tzu-Hsuan Yeh | 2025-02-04 |
| 12178147 | Semiconductor device and method for manufacturing the same | Hai-Dang Trinh, Hsing-Lien Lin, Chii-Ming Wu | 2024-12-24 |
| 12114582 | Top-electrode barrier layer for RRAM | Hsing-Lien Lin, Chii-Ming Wu | 2024-10-08 |
| 12102019 | Data storage structure for improving memory cell reliability | Hai-Dang Trinh, Chii-Ming Wu, Cheng-Yuan Tsai, Tzu-Chung Tsai | 2024-09-24 |
| 12075626 | Memory window of MFM MOSFET for small cell size | Hai-Dang Trinh, Yi Yang Wei, Bi-Shen Lee, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-08-27 |
| 12075636 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Hsia-Wei Chen, Hai-Dang Trinh, Hsun-Chung Kuang | 2024-08-27 |
| 11991937 | Semiconductor device and method for manufacturing the same | Hai-Dang Trinh, Hsing-Lien Lin | 2024-05-21 |
| 11967611 | Multilayer structure, capacitor structure and electronic device | Hai-Dang Trinh, Yi Yang Wei, Bi-Shen Lee, Hsun-Chung Kuang | 2024-04-23 |
| 11963468 | Rram structure | Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin | 2024-04-16 |
| 11961545 | Circuit design and layout with high embedded memory density | Hsia-Wei Chen, Hsun-Chung Kuang, Hai-Dang Trinh, Cheng-Yuan Tsai | 2024-04-16 |
| 11894267 | Method for fabricating integrated circuit device | Hsia-Wei Chen, Fu-Ting Sung, Yu-Wen Liao, Wen-Ting Chu, Tzu-Hsuan Yeh | 2024-02-06 |
| 11895933 | Resistive memory cell with switching layer comprising one or more dopants | Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang, Bi-Shen Lee | 2024-02-06 |
| 11856801 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Hsia-Wei Chen, Hai-Dang Trinh, Hsun-Chung Kuang | 2023-12-26 |
| 11800823 | Method for manufacturing thermal dispersion layer in programmable metallization cell | Hsing-Lien Lin | 2023-10-24 |