Issued Patents All Time
Showing 1–25 of 60 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12369503 | Encapsulated phase change material switch and methods for forming the same | Tsung-Hsueh Yang, Chang-Chih Huang, Kuo-Chyuan Tzeng | 2025-07-22 |
| 12354695 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Chung-Chiang Min, Yuan-Tai Tseng | 2025-07-08 |
| 12302764 | In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same | Tsung-Hsueh Yang, Chang-Chih Huang | 2025-05-13 |
| 12268102 | Horn shaped spacer for memory devices | Huachun Liu | 2025-04-01 |
| 12245528 | Memory device with composite spacer | Chern-Yow Hsu, Shih-Chang Liu | 2025-03-04 |
| 12225829 | Semiconductor structure, electrode structure and method of forming the same | Chung-Yen Chou, Yao-Wen Chang, Shih-Chang Liu | 2025-02-11 |
| 12218005 | Integrated circuit device | Hsia-Wei Chen, Yu-Wen Liao, Wen-Ting Chu, Fa-Shen Jiang, Tzu-Hsuan Yeh | 2025-02-04 |
| 12161057 | Method for forming semiconductor structure | Hsing-Lien Lin, Ching Ju Yang, Chii-Ming Wu | 2024-12-03 |
| 11950523 | Memory device, memory integrated circuit and manufacturing method thereof | — | 2024-04-02 |
| 11894267 | Method for fabricating integrated circuit device | Hsia-Wei Chen, Yu-Wen Liao, Wen-Ting Chu, Fa-Shen Jiang, Tzu-Hsuan Yeh | 2024-02-06 |
| 11800822 | Memory device with composite spacer | Chern-Yow Hsu, Shih-Chang Liu | 2023-10-24 |
| 11785861 | Semiconductor structure and method of manufacturing the same | Chung-Chiang Min, Yuan-Tai Tseng, Chern-Yow Hsu, Shih-Chang Liu | 2023-10-10 |
| 11785786 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Chung-Chiang Min, Yuan-Tai Tseng | 2023-10-10 |
| 11637240 | Semiconductor structure and method for forming the same | Hsing-Lien Lin, Ching Ju Yang, Chii-Ming Wu | 2023-04-25 |
| 11581484 | Semiconductor structure, electrode structure and method of forming the same | Chung-Yen Chou, Yao-Wen Chang, Shih-Chang Liu | 2023-02-14 |
| 11417839 | Memory device, memory integrated circuit and manufacturing method thereof | — | 2022-08-16 |
| 11362265 | Semiconductor structure and method of manufacturing the same | Chung-Chiang Min, Yuan-Tai Tseng, Chern-Yow Hsu, Shih-Chang Liu | 2022-06-14 |
| 11342379 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Chung-Chiang Min, Yuan-Tai Tseng | 2022-05-24 |
| 11258007 | Reversed stack MTJ | Wei-Hang Huang, Chern-Yow Hsu, Shih-Chang Liu, Chia-Shiung Tsai | 2022-02-22 |
| 11227993 | Device with composite spacer and method for manufacturing the same | Chern-Yow Hsu, Shih-Chang Liu | 2022-01-18 |
| 11114610 | Semiconductor structure, electrode structure and method of forming the same | Chung-Yen Chou, Yao-Wen Chang, Shih-Chang Liu | 2021-09-07 |
| 11050021 | Method for manufacturing resistive random access memory structure | Chern-Yow Hsu, Shih-Chang Liu | 2021-06-29 |
| 11018299 | Memory cell having resistance variable film and method of making the same | Ching-Pei Hsieh, Chia-Shiung Tsai, Chern-Yow Hsu, Shih-Chang Liu | 2021-05-25 |
| 10957852 | Resistance variable memory structure and method of forming the same | Ching-Pei Hsieh, Chia-Shiung Tsai, Chern-Yow Hsu, Shih-Chang Liu | 2021-03-23 |
| 10840438 | Reversed stack MTJ | Wei-Hang Huang, Chern-Yow Hsu, Shih-Chang Liu, Chia-Shiung Tsai | 2020-11-17 |