Issued Patents All Time
Showing 1–25 of 105 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12364173 | Resistive memory cell using an interfacial transition metal compound layer and method of forming the same | Wen-Hao Cheng, Yuan-Huang LEE, Yen-Yu Chen, Hsuan-Chih Chu | 2025-07-15 |
| 12336442 | Memory device with bottom electrode | Hsia-Wei Chen, Chih-Hung Pan, Chih-Hsiang Chang, Wen-Ting Chu | 2025-06-17 |
| 12238939 | Memory device having two memory stacks over one bottom electrode | Chieh-Fei Chiu, Yong-Shiuan Tsair, Wen-Ting Chu, Chin-Yu Mei, Po-Hao Tseng | 2025-02-25 |
| 12232333 | Integrated circuit | Chieh-Fei Chiu, Wen-Ting Chu, Yong-Shiuan Tsair, Chih-Yang Chang, Chin-Chieh Yang | 2025-02-18 |
| 12218005 | Integrated circuit device | Hsia-Wei Chen, Fu-Ting Sung, Wen-Ting Chu, Fa-Shen Jiang, Tzu-Hsuan Yeh | 2025-02-04 |
| 12161056 | Memory structure | Chieh-Fei Chiu, Wen-Ting Chu, Yong-Shiuan Tsair, Chin-Yu Mei, Po-Hao Tseng | 2024-12-03 |
| 12075634 | RRAM memory cell with multiple filaments | Chin-Chieh Yang, Chih-Yang Chang, Wen-Ting Chu | 2024-08-27 |
| 11980041 | Method to form memory cells separated by a void-free dielectric structure | Hsia-Wei Chen, Wen-Ting Chu | 2024-05-07 |
| 11894267 | Method for fabricating integrated circuit device | Hsia-Wei Chen, Fu-Ting Sung, Wen-Ting Chu, Fa-Shen Jiang, Tzu-Hsuan Yeh | 2024-02-06 |
| 11889705 | Interconnect landing method for RRAM technology | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Kuo-Chi Tu +1 more | 2024-01-30 |
| 11856797 | Resistive switching random access memory with asymmetric source and drain | Chin-Chieh Yang, Hsia-Wei Chen, Chih-Yang Chang, Kuo-Chi Tu, Wen-Ting Chu | 2023-12-26 |
| 11844286 | Flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more | 2023-12-12 |
| 11839090 | Memory cells separated by a void-free dielectric structure | Hsia-Wei Chen, Wen-Ting Chu | 2023-12-05 |
| 11832529 | Memory device | Harry-Hak-Lay Chuang, Hung Cho Wang, Tong-Chern Ong, Wen-Ting Chu, Kuei-Hung Shen +2 more | 2023-11-28 |
| 11751485 | Flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more | 2023-09-05 |
| 11751405 | Integrated circuit and method for fabricating the same | Chieh-Fei Chiu, Wen-Ting Chu, Yong-Shiuan Tsair, Chih-Yang Chang, Chin-Chieh Yang | 2023-09-05 |
| 11737290 | RRAM memory cell with multiple filaments | Chin-Chieh Yang, Chih-Yang Chang, Wen-Ting Chu | 2023-08-22 |
| 11723294 | Memory device and method for fabricating the same | Hsia-Wei Chen, Chih-Hung Pan, Chih-Hsiang Chang, Wen-Ting Chu | 2023-08-08 |
| 11723292 | RRAM cell structure with laterally offset BEVA/TEVA | Chih-Yang Chang, Wen-Ting Chu, Kuo-Chi Tu, Hsia-Wei Chen, Chin-Chieh Yang +2 more | 2023-08-08 |
| 11678592 | Step height mitigation in resistive random access memory structures | Wei-Ming Wang, Chia-Wei Liu, Jen-Sheng Yang, Wen-Ting Chu, Huei-Tzu Wang | 2023-06-13 |
| 11637239 | High yield RRAM cell with optimized film scheme | Trinh Hai Dang, Hsing-Lien Lin, Cheng-Yuan Tsai, Chin-Chieh Yang, Wen-Ting Chu +1 more | 2023-04-25 |
| 11387411 | Logic compatible RRAM structure and process | Chih-Yang Chang, Hsia-Wei Chen, Chin-Chieh Yang, Kuo-Chi Tu, Wen-Ting Chu | 2022-07-12 |
| 11316096 | Memory device | Harry-Hak-Lay Chuang, Hung Cho Wang, Tong-Chern Ong, Wen-Ting Chu, Kuei-Hung Shen +2 more | 2022-04-26 |
| 11315861 | Method for forming a homogeneous bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Wen-Ting Chu | 2022-04-26 |
| 11296147 | Method for manufacturing memory device having spacer | Chieh-Fei Chiu, Yong-Shiuan Tsair, Wen-Ting Chu, Chin-Yu Mei, Po-Hao Tseng | 2022-04-05 |