SS

Sheng-Hung Shih

TSMC: 61 patents #513 of 12,232Top 5%
AE Advanced Semiconductor Engineering: 1 patents #625 of 1,073Top 60%
Overall (All Time): #36,369 of 4,157,543Top 1%
62
Patents All Time

Issued Patents All Time

Showing 1–25 of 62 patents

Patent #TitleCo-InventorsDate
12432929 Ferroelectric memory device with blocking layer Tzu-Yu Chen, Chu-Jie Huang, Wan-Chen Chen, Fu-Chen Chang, Kuo-Chi Tu 2025-09-30
12419056 Integrated circuit and method for manufacturing the same Tzu-Yu Chen, Kuo-Chi Tu 2025-09-16
12369327 MFM device with an enhanced bottom electrode Harry-Hak-Lay Chuang, Fu-Chen Chang, Tzu-Yu Chen, Kuo-Chi Tu 2025-07-22
12356630 Semiconductor device and method of forming the same Fu-Chen Chang, Kuo-Chi Tu, Tzu-Yu Chen 2025-07-08
12238934 Method of fabricating semiconductor device comprising ferroelectric layer Tzu-Yu Chen, Hsin-Yu Lai, Fu-Chen Chang, Kuo-Chi Tu 2025-02-25
12171104 Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) Tzu-Yu Chen, Kuo-Chi Tu, Fu-Chen Chang 2024-12-17
12167611 FeRAM MFM structure with selective electrode etch Chih-Hsiang Chang, Kuo-Chi Tu, Wen-Ting Chu, Tzu-Yu Chen, Fu-Chen Chang 2024-12-10
12114509 FeRAM decoupling capacitor Tzu-Yu Chen, Kuo-Chi Tu, Fu-Chen Chang, Chih-Hsiang Chang 2024-10-08
12082421 Semiconductor device and method for manufacturing the same Tzu-Yu Chen, Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu 2024-09-03
12057154 Method for efficiently waking up ferroelectric memory Tzu-Yu Chen, Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu 2024-08-06
11856788 Semiconductor device and method of fabricating the same Tzu-Yu Chen, Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu, Alexander Kalnitsky 2023-12-26
11849588 Semiconductor device and method of forming the same Fu-Chen Chang, Kuo-Chi Tu, Tzu-Yu Chen 2023-12-19
11844286 Flat bottom electrode via (BEVA) top surface for memory Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Tung-Sheng Hsiao +3 more 2023-12-12
11800720 Memory cell having a top electrode interconnect arranged laterally from a recess Tzu-Yu Chen, Kuo-Chi Tu, Wen-Ting Chu, Chih-Hsiang Chang, Fu-Chen Chang 2023-10-24
11785777 FeRAM MFM structure with selective electrode etch Chih-Hsiang Chang, Kuo-Chi Tu, Wen-Ting Chu, Tzu-Yu Chen, Fu-Chen Chang 2023-10-10
11751401 Integrated circuit and method for manufacturing the same Tzu-Yu Chen, Kuo-Chi Tu 2023-09-05
11751485 Flat bottom electrode via (BEVA) top surface for memory Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Tung-Sheng Hsiao +3 more 2023-09-05
11723292 RRAM cell structure with laterally offset BEVA/TEVA Chih-Yang Chang, Wen-Ting Chu, Kuo-Chi Tu, Yu-Wen Liao, Hsia-Wei Chen +2 more 2023-08-08
11723213 Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) Tzu-Yu Chen, Kuo-Chi Tu, Fu-Chen Chang 2023-08-08
11706930 Semiconductor device and method for manufacturing the same Tzu-Yu Chen, Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu 2023-07-18
11587881 Substrate structure including embedded semiconductor device Chien-Fan Chen, Yu-Ju Liao, Chu-Jie Yang 2023-02-21
11557609 Integrated circuit structure and method of forming the same Tzu-Yu Chen, Fu-Chen Chang, Kuo-Chi Tu 2023-01-17
11296116 Semiconductor device and method of forming the same Fu-Chen Chang, Kuo-Chi Tu, Tzu-Yu Chen 2022-04-05
11296099 FeRAM decoupling capacitor Tzu-Yu Chen, Kuo-Chi Tu, Fu-Chen Chang, Chih-Hsiang Chang 2022-04-05
11257844 Ferroelectric random access memory (FRAM) cell Tzu-Yu Chen, Kuo-Chi Tu, Wen-Ting Chu 2022-02-22