Issued Patents All Time
Showing 1–25 of 190 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432929 | Ferroelectric memory device with blocking layer | Tzu-Yu Chen, Chu-Jie Huang, Wan-Chen Chen, Fu-Chen Chang, Sheng-Hung Shih | 2025-09-30 |
| 12419056 | Integrated circuit and method for manufacturing the same | Tzu-Yu Chen, Sheng-Hung Shih | 2025-09-16 |
| 12369327 | MFM device with an enhanced bottom electrode | Harry-Hak-Lay Chuang, Fu-Chen Chang, Tzu-Yu Chen, Sheng-Hung Shih | 2025-07-22 |
| 12356630 | Semiconductor device and method of forming the same | Fu-Chen Chang, Tzu-Yu Chen, Sheng-Hung Shih | 2025-07-08 |
| 12356875 | RRAM bottom electrode | Fu-Chen Chang, Wen-Ting Chu | 2025-07-08 |
| 12322429 | Embedded ferroelectric memory cell | Tzu-Yu Chen, Wen-Ting Chu, Yong-Shiuan Tsair | 2025-06-03 |
| 12238934 | Method of fabricating semiconductor device comprising ferroelectric layer | Tzu-Yu Chen, Hsin-Yu Lai, Sheng-Hung Shih, Fu-Chen Chang | 2025-02-25 |
| 12171104 | Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang | 2024-12-17 |
| 12167611 | FeRAM MFM structure with selective electrode etch | Chih-Hsiang Chang, Sheng-Hung Shih, Wen-Ting Chu, Tzu-Yu Chen, Fu-Chen Chang | 2024-12-10 |
| 12114509 | FeRAM decoupling capacitor | Tzu-Yu Chen, Fu-Chen Chang, Chih-Hsiang Chang, Sheng-Hung Shih | 2024-10-08 |
| 12082421 | Semiconductor device and method for manufacturing the same | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Wen-Ting Chu | 2024-09-03 |
| 12057154 | Method for efficiently waking up ferroelectric memory | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Wen-Ting Chu | 2024-08-06 |
| 12041861 | RRAM bottom electrode | Fu-Chen Chang, Wen-Ting Chu | 2024-07-16 |
| 12040019 | Methods for enlarging the memory window and improving data retention in resistive memory device | Fu-Chen Chang, Chu-Jie Huang, Nai-Chao Su, Wen-Ting Chu | 2024-07-16 |
| 11889705 | Interconnect landing method for RRAM technology | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Wen-Ting Chu +1 more | 2024-01-30 |
| 11869564 | Embedded ferroelectric memory cell | Tzu-Yu Chen, Wen-Ting Chu, Yong-Shiuan Tsair | 2024-01-09 |
| 11856797 | Resistive switching random access memory with asymmetric source and drain | Chin-Chieh Yang, Hsia-Wei Chen, Chih-Yang Chang, Wen-Ting Chu, Yu-Wen Liao | 2023-12-26 |
| 11856788 | Semiconductor device and method of fabricating the same | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Wen-Ting Chu, Alexander Kalnitsky | 2023-12-26 |
| 11849588 | Semiconductor device and method of forming the same | Fu-Chen Chang, Tzu-Yu Chen, Sheng-Hung Shih | 2023-12-19 |
| 11800720 | Memory cell having a top electrode interconnect arranged laterally from a recess | Tzu-Yu Chen, Sheng-Hung Shih, Wen-Ting Chu, Chih-Hsiang Chang, Fu-Chen Chang | 2023-10-24 |
| 11785777 | FeRAM MFM structure with selective electrode etch | Chih-Hsiang Chang, Sheng-Hung Shih, Wen-Ting Chu, Tzu-Yu Chen, Fu-Chen Chang | 2023-10-10 |
| 11751406 | 3D RRAM cell structure for reducing forming and set voltages | Te-Hsien Hsieh, Tzu-Yu Chen, Yuan-Tai Tseng | 2023-09-05 |
| 11751401 | Integrated circuit and method for manufacturing the same | Tzu-Yu Chen, Sheng-Hung Shih | 2023-09-05 |
| 11723292 | RRAM cell structure with laterally offset BEVA/TEVA | Chih-Yang Chang, Wen-Ting Chu, Yu-Wen Liao, Hsia-Wei Chen, Chin-Chieh Yang +2 more | 2023-08-08 |
| 11723213 | Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang | 2023-08-08 |