FC

Fu-Chen Chang

TSMC: 36 patents #941 of 12,232Top 8%
📍 New Taipei, TW: #248 of 10,472 inventorsTop 3%
Overall (All Time): #87,970 of 4,157,543Top 3%
37
Patents All Time

Issued Patents All Time

Showing 1–25 of 37 patents

Patent #TitleCo-InventorsDate
12432929 Ferroelectric memory device with blocking layer Tzu-Yu Chen, Chu-Jie Huang, Wan-Chen Chen, Sheng-Hung Shih, Kuo-Chi Tu 2025-09-30
12369327 MFM device with an enhanced bottom electrode Harry-Hak-Lay Chuang, Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu 2025-07-22
12356630 Semiconductor device and method of forming the same Kuo-Chi Tu, Tzu-Yu Chen, Sheng-Hung Shih 2025-07-08
12356875 RRAM bottom electrode Kuo-Chi Tu, Wen-Ting Chu 2025-07-08
12238934 Method of fabricating semiconductor device comprising ferroelectric layer Tzu-Yu Chen, Hsin-Yu Lai, Sheng-Hung Shih, Kuo-Chi Tu 2025-02-25
12171104 Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) Tzu-Yu Chen, Kuo-Chi Tu, Sheng-Hung Shih 2024-12-17
12167611 FeRAM MFM structure with selective electrode etch Chih-Hsiang Chang, Kuo-Chi Tu, Sheng-Hung Shih, Wen-Ting Chu, Tzu-Yu Chen 2024-12-10
12114509 FeRAM decoupling capacitor Tzu-Yu Chen, Kuo-Chi Tu, Chih-Hsiang Chang, Sheng-Hung Shih 2024-10-08
12087618 Method for forming semiconductor die having edge with multiple gradients Yu-Sheng Tang, Cheng-Lin Huang, Wen-Ming Chen, Chun-Yen Lo, Kuo-Chio Liu 2024-09-10
12082421 Semiconductor device and method for manufacturing the same Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu, Wen-Ting Chu 2024-09-03
12057154 Method for efficiently waking up ferroelectric memory Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu, Wen-Ting Chu 2024-08-06
12041861 RRAM bottom electrode Kuo-Chi Tu, Wen-Ting Chu 2024-07-16
12040019 Methods for enlarging the memory window and improving data retention in resistive memory device Chu-Jie Huang, Nai-Chao Su, Kuo-Chi Tu, Wen-Ting Chu 2024-07-16
11856788 Semiconductor device and method of fabricating the same Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu, Wen-Ting Chu, Alexander Kalnitsky 2023-12-26
11849588 Semiconductor device and method of forming the same Kuo-Chi Tu, Tzu-Yu Chen, Sheng-Hung Shih 2023-12-19
11800720 Memory cell having a top electrode interconnect arranged laterally from a recess Tzu-Yu Chen, Kuo-Chi Tu, Sheng-Hung Shih, Wen-Ting Chu, Chih-Hsiang Chang 2023-10-24
11785777 FeRAM MFM structure with selective electrode etch Chih-Hsiang Chang, Kuo-Chi Tu, Sheng-Hung Shih, Wen-Ting Chu, Tzu-Yu Chen 2023-10-10
11723213 Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) Tzu-Yu Chen, Kuo-Chi Tu, Sheng-Hung Shih 2023-08-08
11706930 Semiconductor device and method for manufacturing the same Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu, Wen-Ting Chu 2023-07-18
11682456 Methods for enlarging the memory window and improving data retention in restistive memory device Chu-Jie Huang, Nai-Chao Su, Kuo-Chi Tu, Wen-Ting Chu 2023-06-20
11611038 Method for forming RRAM with a barrier layer Kuo-Chi Tu, Wen-Ting Chu, Chu-Jie Huang 2023-03-21
11557609 Integrated circuit structure and method of forming the same Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu 2023-01-17
11367658 Semiconductor die singulation and structures formed thereby Cheng-Lin Huang, Wen-Ming Chen 2022-06-21
11296099 FeRAM decoupling capacitor Tzu-Yu Chen, Kuo-Chi Tu, Chih-Hsiang Chang, Sheng-Hung Shih 2022-04-05
11296116 Semiconductor device and method of forming the same Kuo-Chi Tu, Tzu-Yu Chen, Sheng-Hung Shih 2022-04-05