Issued Patents All Time
Showing 26–50 of 190 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11706930 | Semiconductor device and method for manufacturing the same | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Wen-Ting Chu | 2023-07-18 |
| 11682456 | Methods for enlarging the memory window and improving data retention in restistive memory device | Fu-Chen Chang, Chu-Jie Huang, Nai-Chao Su, Wen-Ting Chu | 2023-06-20 |
| 11611038 | Method for forming RRAM with a barrier layer | Fu-Chen Chang, Wen-Ting Chu, Chu-Jie Huang | 2023-03-21 |
| 11594632 | Wakeup-free ferroelectric memory device | Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Pili Huang, Cheng-Jun Wu +1 more | 2023-02-28 |
| 11557609 | Integrated circuit structure and method of forming the same | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang | 2023-01-17 |
| 11437084 | Embedded ferroelectric memory cell | Tzu-Yu Chen, Wen-Ting Chu, Yong-Shiuan Tsair | 2022-09-06 |
| 11387411 | Logic compatible RRAM structure and process | Chih-Yang Chang, Hsia-Wei Chen, Chin-Chieh Yang, Wen-Ting Chu, Yu-Wen Liao | 2022-07-12 |
| 11296099 | FeRAM decoupling capacitor | Tzu-Yu Chen, Fu-Chen Chang, Chih-Hsiang Chang, Sheng-Hung Shih | 2022-04-05 |
| 11296116 | Semiconductor device and method of forming the same | Fu-Chen Chang, Tzu-Yu Chen, Sheng-Hung Shih | 2022-04-05 |
| 11257844 | Ferroelectric random access memory (FRAM) cell | Tzu-Yu Chen, Sheng-Hung Shih, Wen-Ting Chu | 2022-02-22 |
| 11239279 | Resistive switching random access memory with asymmetric source and drain | Chin-Chieh Yang, Hsia-Wei Chen, Chih-Yang Chang, Wen-Ting Chu, Yu-Wen Liao | 2022-02-01 |
| 11227872 | FeRAM MFM structure with selective electrode etch | Chih-Hsiang Chang, Sheng-Hung Shih, Wen-Ting Chu, Tzu-Yu Chen, Fu-Chen Chang | 2022-01-18 |
| 11195840 | Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) | Tzu-Yu Chen, Sheng-Hung Shih, Wen-Ting Chu, Yong-Shiuan Tsair | 2021-12-07 |
| 11189788 | RRAM bottom electrode | Fu-Chen Chang, Wen-Ting Chu | 2021-11-30 |
| 11183503 | Memory cell having top and bottom electrodes defining recesses | Tzu-Yu Chen, Sheng-Hung Shih, Wen-Ting Chu, Chih-Hsiang Chang, Fu-Chen Chang | 2021-11-23 |
| 11094744 | Interconnect landing method for RRAM technology | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Wen-Ting Chu +1 more | 2021-08-17 |
| 11088203 | 3D RRAM cell structure for reducing forming and set voltages | Te-Hsien Hsieh, Tzu-Yu Chen, Yuan-Tai Tseng | 2021-08-10 |
| 11037941 | Method for forming an integrated circuit and an integrated circuit | Tzu-Yu Chen, Wen-Ting Chu, Yong-Shiuan Tsair | 2021-06-15 |
| 11017852 | Method of forming memory device | Chu-Jie Huang, Sheng-Hung Shih, Nai-Chao Su, Wen-Ting Chu | 2021-05-25 |
| 11011224 | Memory device and method for forming the same | Chu-Jie Huang, Sheng-Hung Shih, Nai-Chao Su, Wen-Ting Chu | 2021-05-18 |
| 11004975 | Semiconductor device and manufacturing method thereof | Jen-Sheng Yang, Sheng-Hung Shih, Tong-Chern Ong, Wen-Ting Chu | 2021-05-11 |
| 10950784 | RRAM with a barrier layer | Fu-Chen Chang, Wen-Ting Chu, Chu-Jie Huang | 2021-03-16 |
| 10930333 | Embedded ferroelectric memory cell | Tzu-Yu Chen, Wen-Ting Chu, Yong-Shiuan Tsair | 2021-02-23 |
| 10903274 | Interconnect landing method for RRAM technology | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Wen-Ting Chu +1 more | 2021-01-26 |
| 10879391 | Wakeup-free ferroelectric memory device | Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Pili Huang, Cheng-Jun Wu +1 more | 2020-12-29 |