Issued Patents All Time
Showing 1–25 of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12389814 | High electron affinity dielectric layer to improve cycling | Chao-Yang Chen, Kuo-Ching Huang, Wen-Ting Chu, Cheng-Jun Wu | 2025-08-12 |
| 11696521 | High electron affinity dielectric layer to improve cycling | Chao-Yang Chen, Kuo-Ching Huang, Wen-Ting Chu, Cheng-Jun Wu | 2023-07-04 |
| 11631810 | Bottom electrode structure in memory device | Chao-Yang Chen, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang, Cheng-Jun Wu | 2023-04-18 |
| 11594632 | Wakeup-free ferroelectric memory device | Mickey Hsieh, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu +1 more | 2023-02-28 |
| 11315931 | Embedded transistor | Yu-Wei Ting, Kuo-Ching Huang | 2022-04-26 |
| 11107528 | Multi-step reset technique to enlarge memory window | Chao-Yang Chen, Cheng-Jun Wu, Kuo-Ching Huang | 2021-08-31 |
| 10985316 | Bottom electrode structure in memory device | Chao-Yang Chen, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang, Cheng-Jun Wu | 2021-04-20 |
| 10879309 | Memory circuit and formation method thereof | Kuo-Ching Huang, Tong-Chern Ong | 2020-12-29 |
| 10879391 | Wakeup-free ferroelectric memory device | Mickey Hsieh, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu +1 more | 2020-12-29 |
| 10879310 | Memory circuit and formation method thereof | Kuo-Ching Huang, Tong-Chern Ong | 2020-12-29 |
| 10861547 | Multi-step reset technique to enlarge memory window | Chao-Yang Chen, Cheng-Jun Wu, Kuo-Ching Huang | 2020-12-08 |
| 10748907 | Embedded transistor | Yu-Wei Ting, Kuo-Ching Huang | 2020-08-18 |
| 10700070 | Embedded transistor | Yu-Wei Ting, Kuo-Ching Huang | 2020-06-30 |
| 10461126 | Memory circuit and formation method thereof | Kuo-Ching Huang, Tong-Chern Ong | 2019-10-29 |
| 10262731 | Device and method for forming resistive random access memory cell | Chih-Yang Chang, Wen-Ting Chu, Yu-Wei Ting, Kuo-Ching Huang | 2019-04-16 |
| 10062735 | Innovative approach of 4F2 driver formation for high-density RRAM and MRAM | Yu-Wei Ting, Chi-Wen Liu, Kuo-Ching Huang | 2018-08-28 |
| 9991368 | Vertical BJT for high density memory | Yu-Wei Ting, Kuo-Ching Huang | 2018-06-05 |
| 9893122 | Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof | Yu-Wei Ting, Kuo-Ching Huang | 2018-02-13 |
| 9680091 | Structure and method for a complimentary resistive switching random access memory for high density application | Yu-Wei Ting, Kuo-Ching Huang | 2017-06-13 |
| 9634134 | Embedded transistor | Yu-Wei Ting, Kuo-Ching Huang | 2017-04-25 |
| 9576651 | RRAM and method of read operation for RRAM | Yu-Wei Ting, Kuo-Ching Huang, Chia-Fu Lee | 2017-02-21 |
| 9576656 | Device and method for setting resistive random access memory cell | Yu-Wei Ting, Kuo-Ching Huang | 2017-02-21 |
| 9543404 | Vertical BJT for high density memory | Yu-Wei Ting, Kuo-Ching Huang | 2017-01-10 |
| 9530462 | Memory cell with decoupled read/write path | Yu-Wei Ting, Kuo-Ching Huang | 2016-12-27 |
| 9520446 | Innovative approach of 4F2 driver formation for high-density RRAM and MRAM | Yu-Wei Ting, Chi-Wen Liu, Kuo-Ching Huang | 2016-12-13 |