Issued Patents All Time
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12389814 | High electron affinity dielectric layer to improve cycling | Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu | 2025-08-12 |
| 11696521 | High electron affinity dielectric layer to improve cycling | Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu | 2023-07-04 |
| 11631810 | Bottom electrode structure in memory device | Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang | 2023-04-18 |
| 11594632 | Wakeup-free ferroelectric memory device | Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang +1 more | 2023-02-28 |
| 11107528 | Multi-step reset technique to enlarge memory window | Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang | 2021-08-31 |
| 10985316 | Bottom electrode structure in memory device | Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang | 2021-04-20 |
| 10879391 | Wakeup-free ferroelectric memory device | Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang +1 more | 2020-12-29 |
| 10861547 | Multi-step reset technique to enlarge memory window | Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang | 2020-12-08 |