Issued Patents All Time
Showing 1–25 of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11832529 | Memory device | Harry-Hak-Lay Chuang, Hung Cho Wang, Wen-Ting Chu, Yu-Wen Liao, Kuei-Hung Shen +2 more | 2023-11-28 |
| 11329221 | Electrode structure to improve RRAM performance | Wen-Ting Chu, Ying-Lang Wang | 2022-05-10 |
| 11316096 | Memory device | Harry-Hak-Lay Chuang, Hung Cho Wang, Wen-Ting Chu, Yu-Wen Liao, Kuei-Hung Shen +2 more | 2022-04-26 |
| 11183631 | Electrode structure to improve RRAM performance | Wen-Ting Chu, Ying-Lang Wang | 2021-11-23 |
| 11004975 | Semiconductor device and manufacturing method thereof | Kuo-Chi Tu, Jen-Sheng Yang, Sheng-Hung Shih, Wen-Ting Chu | 2021-05-11 |
| 10916305 | RRAM-based monotonic counter | Shih-Lien Linus Lu, Yu-Der Chih, Chung-Cheng Chou | 2021-02-09 |
| 10879309 | Memory circuit and formation method thereof | Chun-Yang Tsai, Kuo-Ching Huang | 2020-12-29 |
| 10879310 | Memory circuit and formation method thereof | Chun-Yang Tsai, Kuo-Ching Huang | 2020-12-29 |
| 10727337 | Semiconductor device and manufacturing method thereof | Kuo-Chi Tu, Jen-Sheng Yang, Sheng-Hung Shih, Wen-Ting Chu | 2020-07-28 |
| 10686125 | Memory device | Harry-Hak-Lay Chuang, Hung Cho Wang, Wen-Ting Chu, Yu-Wen Liao, Kuei-Hung Shen +2 more | 2020-06-16 |
| 10516106 | Electrode structure to improve RRAM performance | Wen-Ting Chu, Ying-Lang Wang | 2019-12-24 |
| 10482958 | RRAM-based monotonic counter | Shih-Lien Linus Lu, Yu-Der Chih, Chung-Cheng Chou | 2019-11-19 |
| 10461126 | Memory circuit and formation method thereof | Chun-Yang Tsai, Kuo-Ching Huang | 2019-10-29 |
| 10249756 | Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereof | Kuo-Chi Tu, Jen-Sheng Yang, Sheng-Hung Shih, Wen-Ting Chu | 2019-04-02 |
| 10164169 | Memory device having a single bottom electrode layer | Harry-Hak-Lay Chuang, Hung Cho Wang, Wen-Ting Chu, Yu-Wen Liao, Kuei-Hung Shen +2 more | 2018-12-25 |
| 9412721 | Contactless communications using ferromagnetic material | Ping-Lin Yang, Jun-De Jin, Fu-Lung Hsueh, Sa-Lly Liu, Chun-Jung Lin +1 more | 2016-08-09 |
| 9385316 | RRAM retention by depositing Ti capping layer before HK HfO | Yu-Wen Liao, Wen-Ting Chu | 2016-07-05 |
| 8816422 | Multi-trapping layer flash memory cell | Ming-Tsong Wang | 2014-08-26 |
| 8760255 | Contactless communications using ferromagnetic material | Ping-Lin Yang, Jun-De Jin, Fu-Lung Hsueh, Sa-Lly Liu, Chun-Jung Lin +1 more | 2014-06-24 |
| 8735963 | Flash memory cells having leakage-inhibition layers | Ming-Tsong Wang, Albert Chin, Hsueh-Jen Yang | 2014-05-27 |
| 8294197 | Program/erase schemes for floating gate memory cells | Ming-Tsong Wang | 2012-10-23 |
| 7968967 | One-time-programmable anti-fuse formed using damascene process | Ming-Tsong Wang | 2011-06-28 |
| 7579646 | Flash memory with deep quantum well and high-K dielectric | Ming-Tsong Wang, Albert Chin, Chun-Hung Lai | 2009-08-25 |
| 7420250 | Electrostatic discharge protection device having light doped regions | Shu-Chuan Lee, Ming-Hsiang Song, Shao-Chang Huang, Yi-Hsun Wu, Kuo-Feng Yu +1 more | 2008-09-02 |
| 7388187 | Cross-talk reduction through deep pixel well implant for image sensors | Han-Chi Liu, Chung-Wei Chang, Shou-Gwo Wuu, Chun-Yao Ko | 2008-06-17 |