Issued Patents All Time
Showing 1–25 of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12369332 | Memory device for reducing thermal crosstalk | — | 2025-07-22 |
| 12354695 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Fu-Ting Sung, Chung-Chiang Min | 2025-07-08 |
| 12310261 | Memory device having via landing protection | Tsung-Hsueh Yang, Shih-Chang Liu | 2025-05-20 |
| 12302767 | Buffer layer in memory cell to prevent metal redeposition | Chung-Chiang Min, Chang-Chih Huang, Kuo-Chyuan Tzeng, Yihuei Zhu | 2025-05-13 |
| 12274182 | Sidewall spacer structure for memory cell | Yao-Wen Chang, Chung-Chiang Min, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsung-Hsueh Yang +2 more | 2025-04-08 |
| 12048258 | Phase change memory device and method for manufacturing the same | Chang-Chih Huang, Kuo-Chyuan Tzeng | 2024-07-23 |
| 11950434 | Memory device for reducing thermal crosstalk | — | 2024-04-02 |
| 11871686 | Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls | Shih-Chang Liu | 2024-01-09 |
| 11855127 | Semiconductor structure and method for forming the same | Yi Jen Tsai, Chern-Yow Hsu | 2023-12-26 |
| 11818962 | Sidewall spacer structure for memory cell | Yao-Wen Chang, Chung-Chiang Min, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsung-Hsueh Yang +2 more | 2023-11-14 |
| 11805660 | Semiconductor structure | Chern-Yow Hsu, Shih-Chang Liu | 2023-10-31 |
| 11785861 | Semiconductor structure and method of manufacturing the same | Fu-Ting Sung, Chung-Chiang Min, Chern-Yow Hsu, Shih-Chang Liu | 2023-10-10 |
| 11785786 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Fu-Ting Sung, Chung-Chiang Min | 2023-10-10 |
| 11751406 | 3D RRAM cell structure for reducing forming and set voltages | Te-Hsien Hsieh, Tzu-Yu Chen, Kuo-Chi Tu | 2023-09-05 |
| 11742262 | Integrated circuit having a resistor layer partially overlapping endcaps | Chia-Shiung Tsai, Chung-Yen Chou, Ming Chyi Liu | 2023-08-29 |
| 11690232 | High density memory devices with low cell leakage and methods for forming the same | Te-Hsien Hsieh | 2023-06-27 |
| 11665911 | Method of forming memory cell | Chung-Chiang Min, Shih-Chang Liu | 2023-05-30 |
| 11569296 | Semiconductor structure | Chern-Yow Hsu, Shih-Chang Liu | 2023-01-31 |
| 11532785 | Buffer layer in memory cell to prevent metal redeposition | Chung-Chiang Min, Chang-Chih Huang, Kuo-Chyuan Tzeng, Yihuei Zhu | 2022-12-20 |
| 11532697 | Semiconductor structure and method for forming the same | Yi Jen Tsai, Chern-Yow Hsu | 2022-12-20 |
| 11430956 | RRAM cell structure with conductive etch-stop layer | Ming Chyi Liu, Chern-Yow Hsu, Shih-Chang Liu, Chia-Shiung Tsai | 2022-08-30 |
| 11362265 | Semiconductor structure and method of manufacturing the same | Fu-Ting Sung, Chung-Chiang Min, Chern-Yow Hsu, Shih-Chang Liu | 2022-06-14 |
| 11342379 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Fu-Ting Sung, Chung-Chiang Min | 2022-05-24 |
| 11289648 | Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls | Shih-Chang Liu | 2022-03-29 |
| 11289651 | Memory device having via landing protection | Tsung-Hsueh Yang, Shih-Chang Liu | 2022-03-29 |