Issued Patents All Time
Showing 1–25 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12354695 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Fu-Ting Sung, Yuan-Tai Tseng | 2025-07-08 |
| 12302767 | Buffer layer in memory cell to prevent metal redeposition | Chang-Chih Huang, Yuan-Tai Tseng, Kuo-Chyuan Tzeng, Yihuei Zhu | 2025-05-13 |
| 12274182 | Sidewall spacer structure for memory cell | Yao-Wen Chang, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsung-Hsueh Yang, Yuan-Tai Tseng +2 more | 2025-04-08 |
| 12027420 | Etch stop layer for memory device formation | Sheng-Huang Huang, Harry-Hak-Lay Chuang, Hung Cho Wang, Sheng-Chang Chen | 2024-07-02 |
| 11925032 | Memory device with flat-top bottom electrodes and methods for forming the same | — | 2024-03-05 |
| 11818962 | Sidewall spacer structure for memory cell | Yao-Wen Chang, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsung-Hsueh Yang, Yuan-Tai Tseng +2 more | 2023-11-14 |
| 11785786 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Fu-Ting Sung, Yuan-Tai Tseng | 2023-10-10 |
| 11785861 | Semiconductor structure and method of manufacturing the same | Fu-Ting Sung, Yuan-Tai Tseng, Chern-Yow Hsu, Shih-Chang Liu | 2023-10-10 |
| 11665911 | Method of forming memory cell | Yuan-Tai Tseng, Shih-Chang Liu | 2023-05-30 |
| 11532785 | Buffer layer in memory cell to prevent metal redeposition | Chang-Chih Huang, Yuan-Tai Tseng, Kuo-Chyuan Tzeng, Yihuei Zhu | 2022-12-20 |
| 11495743 | Non-volatile memory device and manufacturing technology | Chern-Yow Hsu, Shih-Chang Liu | 2022-11-08 |
| 11437431 | Memory device with flat-top bottom electrodes and methods for forming the same | — | 2022-09-06 |
| 11380580 | Etch stop layer for memory device formation | Sheng-Huang Huang, Harry-Hak-Lay Chuang, Hung Cho Wang, Sheng-Chang Chen | 2022-07-05 |
| 11362265 | Semiconductor structure and method of manufacturing the same | Fu-Ting Sung, Yuan-Tai Tseng, Chern-Yow Hsu, Shih-Chang Liu | 2022-06-14 |
| 11342379 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Fu-Ting Sung, Yuan-Tai Tseng | 2022-05-24 |
| 11121308 | Sidewall spacer structure for memory cell | Yao-Wen Chang, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsung-Hsueh Yang, Yuan-Tai Tseng +2 more | 2021-09-14 |
| 11088202 | Method of forming memory cell | Yuan-Tai Tseng, Shih-Chang Liu | 2021-08-10 |
| 10872895 | Method of manufacturing capacitor structure | Tsung-Hsueh Yang, Chang-Ming Wu, Shih-Chang Liu | 2020-12-22 |
| 10825825 | Flash memory structure | Fu-Ting Sung, Wei-Hang Huang, Shih-Chang Liu, Chia-Shiung Tsai | 2020-11-03 |
| 10720568 | Semiconductor structure and method of manufacturing the same | Fu-Ting Sung, Yuan-Tai Tseng, Chern-Yow Hsu, Shih-Chang Liu | 2020-07-21 |
| 10454021 | Semiconductor structure and method of manufacturing the same | Fu-Ting Sung, Yuan-Tai Tseng, Chern-Yow Hsu, Shih-Chang Liu | 2019-10-22 |
| 10355011 | Method for forming flash memory structure | Fu-Ting Sung, Wei-Hang Huang, Shih-Chang Liu, Chia-Shiung Tsai | 2019-07-16 |
| 10276584 | Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gates | Tsung-Hsueh Yang, Chang-Ming Wu, Shih-Chang Liu | 2019-04-30 |
| 9859295 | Method for forming flash memory structure | Fu-Ting Sung, Wei-Hang Huang, Shih-Chang Liu, Chia-Shiung Tsai | 2018-01-02 |
| 9799665 | Method for forming semiconductor device structure | Chang-Ming Wu, Tsung-Hsueh Yang, Shih-Chang Liu | 2017-10-24 |