Issued Patents All Time
Showing 51–62 of 62 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9934853 | Method and apparatus for reading RRAM cell | Chin-Chieh Yang, Chih-Yang Chang, Chang-Sheng Liao, Hsia-Wei Chen, Jen-Sheng Yang +4 more | 2018-04-03 |
| 9780302 | Top electrode for device structures in interconnect | Hsia-Wei Chen, Wen-Ting Chu, Kuo-Chi Tu, Chih-Yang Chang, Chin-Chieh Yang +2 more | 2017-10-03 |
| 9773552 | RRAM cell with PMOS access transistor | Kuo-Chi Tu, Chih-Yang Chang, Hsia-Wei Chen, Chin-Chieh Yang, Jen-Sheng Yang +2 more | 2017-09-26 |
| 9577009 | RRAM cell with PMOS access transistor | Kuo-Chi Tu, Chih-Yang Chang, Hsia-Wei Chen, Chin-Chieh Yang, Jen-Sheng Yang +2 more | 2017-02-21 |
| 9553265 | RRAM device with data storage layer having increased height | Jen-Sheng Yang, Chih-Yang Chang, Chin-Chieh Yang, Kuo-Chi Tu, Wen-Ting Chu +2 more | 2017-01-24 |
| 9444045 | Top electrode for device structures in interconnect | Hsia-Wei Chen, Wen-Ting Chu, Kuo-Chi Tu, Chih-Yang Chang, Chin-Chieh Yang +2 more | 2016-09-13 |
| 9425392 | RRAM cell structure with laterally offset BEVA/TEVA | Chih-Yang Chang, Wen-Ting Chu, Kuo-Chi Tu, Yu-Wen Liao, Hsia-Wei Chen +2 more | 2016-08-23 |
| 9368722 | Resistive random access memory and manufacturing method thereof | Wen-Ting Chu, Kuo-Chi Tu, Yu-Wen Liao, Chih-Yang Chang, Chin-Chieh Yang +3 more | 2016-06-14 |
| 9349953 | Resistance variable memory structure and method of forming the same | Kuo-Chi Tu, Chih-Yang Chang, Hsia-Wei Chen, Yu-Wen Liao, Chin-Chieh Yang +2 more | 2016-05-24 |
| 9172036 | Top electrode blocking layer for RRAM device | Hsia-Wei Chen, Wen-Ting Chu, Kuo-Chi Tu, Chih-Yang Chang, Chin-Chieh Yang +2 more | 2015-10-27 |
| 9112148 | RRAM cell structure with laterally offset BEVA/TEVA | Chih-Yang Chang, Wen-Ting Chu, Kuo-Chi Tu, Yu-Wen Liao, Hsia-Wei Chen +2 more | 2015-08-18 |
| 9076522 | Memory cells breakdown protection | Wen-Chun You, Kuo-Chi Tu, Chih-Yang Chang, Hsia-Wei Chen, Yu-Wen Liao +2 more | 2015-07-07 |