TH

Tung-Sheng Hsiao

TSMC: 6 patents #3,824 of 12,232Top 35%
📍 New Taipei, TW: #2,275 of 10,472 inventorsTop 25%
Overall (All Time): #810,695 of 4,157,543Top 20%
6
Patents All Time

Issued Patents All Time

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
11844286 Flat bottom electrode via (BEVA) top surface for memory Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more 2023-12-12
11751485 Flat bottom electrode via (BEVA) top surface for memory Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more 2023-09-05
11201281 Method for forming a flat bottom electrode via (BEVA) top surface for memory Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more 2021-12-14
10763426 Method for forming a flat bottom electrode via (BEVA) top surface for memory Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more 2020-09-01
10566519 Method for forming a flat bottom electrode via (BEVA) top surface for memory Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more 2020-02-18
8951864 Split-gate device and method of fabricating the same Yu-Hsiung Wang, Chih-Ren Hsieh 2015-02-10