Issued Patents All Time
Showing 1–25 of 105 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12414484 | RRAM structure | Hai-Dang Trinh, Hsing-Lien Lin, Fa-Shen Jiang | 2025-09-09 |
| 12408354 | Method to reduce breakdown failure in a MIM capacitor | Hsing-Lien Lin, Chia-Shiung Tsai, Chung-Yi Yu, Rei-Lin Chu | 2025-09-02 |
| 12261197 | Diffusion barrier layer in top electrode to increase break down voltage | Hsing-Lien Lin, Hai-Dang Trinh, Fa-Shen Jiang | 2025-03-25 |
| 12249586 | Film structure for bond pad | Julie Yang, Tzu-Chung Tsai, Yao-Wen Chang | 2025-03-11 |
| 12239035 | Resistive memory cell having a low forming voltage | Hai-Dang Trinh, Hsing-Lien Lin, Tzu-Chung Tsai, Fa-Shen Jiang, Bi-Shen Lee | 2025-02-25 |
| 12199029 | MIM capacitor with a symmetrical capacitor insulator structure | Hsing-Lien Lin, Cheng-Te Lee, Rei-Lin Chu, Yeur-Luen Tu, Chung-Yi Yu | 2025-01-14 |
| 12178147 | Semiconductor device and method for manufacturing the same | Hai-Dang Trinh, Fa-Shen Jiang, Hsing-Lien Lin | 2024-12-24 |
| 12161057 | Method for forming semiconductor structure | Hsing-Lien Lin, Fu-Ting Sung, Ching Ju Yang | 2024-12-03 |
| 12114582 | Top-electrode barrier layer for RRAM | Hsing-Lien Lin, Fa-Shen Jiang | 2024-10-08 |
| 12102019 | Data storage structure for improving memory cell reliability | Hai-Dang Trinh, Cheng-Yuan Tsai, Tzu-Chung Tsai, Fa-Shen Jiang | 2024-09-24 |
| 12100767 | Strained gate semiconductor device having an interlayer dielectric doped with large species material | Cheng-Ta Wu, Shiu-Ko JangJian, Kun-Tzu Lin, Lan Chang | 2024-09-24 |
| 11963468 | Rram structure | Hai-Dang Trinh, Hsing-Lien Lin, Fa-Shen Jiang | 2024-04-16 |
| 11923235 | Method for forming semiconductor device having isolation structures with different thicknesses | Cheng-Ta Wu, Sen-Hong Syue, Cheng-Po Chau | 2024-03-05 |
| 11721794 | Method for manufacturing reflective structure | Chia-Hua Lin, Yao-Wen Chang, Cheng-Yuan Tsai, Eugene Chen, Tzu-Chung Tsai | 2023-08-08 |
| 11716913 | Data storage structure for improving memory cell reliability | Hai-Dang Trinh, Cheng-Yuan Tsai, Tzu-Chung Tsai, Fa-Shen Jiang | 2023-08-01 |
| 11716915 | Top-electrode barrier layer for RRAM | Hsing-Lien Lin, Fa-Shen Jiang | 2023-08-01 |
| 11637240 | Semiconductor structure and method for forming the same | Hsing-Lien Lin, Fu-Ting Sung, Ching Ju Yang | 2023-04-25 |
| 11594593 | Method to reduce breakdown failure in a MIM capacitor | Hsing-Lien Lin, Chia-Shiung Tsai, Chung-Yi Yu, Rei-Lin Chu | 2023-02-28 |
| 11532698 | Diffusion barrier layer in top electrode to increase break down voltage | Hsing-Lien Lin, Hai-Dang Trinh, Fa-Shen Jiang | 2022-12-20 |
| 11527717 | Resistive memory cell having a low forming voltage | Hai-Dang Trinh, Hsing-Lien Lin, Tzu-Chung Tsai, Fa-Shen Jiang, Bi-Shen Lee | 2022-12-13 |
| 11482668 | RRAM structure | Hai-Dang Trinh, Hsing-Lien Lin, Fa-Shen Jiang | 2022-10-25 |
| 11479849 | Physical vapor deposition chamber with target surface morphology monitor | Hai-Dang Trinh, Shing-Chyang Pan | 2022-10-25 |
| 11476416 | Semiconductor device and method for manufacturing the same | Hai-Dang Trinh, Fa-Shen Jiang, Hsing-Lien Lin | 2022-10-18 |
| 11450555 | Method for forming semiconductor device having isolation structures with different thicknesses | Cheng-Ta Wu, Sen-Hong Syue, Cheng-Po Chau | 2022-09-20 |
| 11430729 | MIM capacitor with a symmetrical capacitor insulator structure | Hsing-Lien Lin, Cheng-Te Lee, Rei-Lin Chu, Yeur-Luen Tu, Chung-Yi Yu | 2022-08-30 |