Issued Patents All Time
Showing 26–50 of 105 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11322464 | Film structure for bond pad | Julie Yang, Tzu-Chung Tsai, Yao-Wen Chang | 2022-05-03 |
| 11309491 | Data storage structure for improving memory cell reliability | Hai-Dang Trinh, Cheng-Yuan Tsai, Tzu-Chung Tsai, Fa-Shen Jiang | 2022-04-19 |
| 11271114 | Strained gate semiconductor device with oxygen-doped interlayer dielectric material | Cheng-Ta Wu, Shiu-Ko JangJian, Kun-Tzu Lin, Lan Chang | 2022-03-08 |
| 11257997 | Semiconductor structure | Chia-Hua Lin, Yao-Wen Chang, Cheng-Yuan Tsai, Eugene Chen, Tzu-Chung Tsai | 2022-02-22 |
| 11152455 | Method to reduce breakdown failure in a MIM capacitor | Hsing-Lien Lin, Chia-Shiung Tsai, Chung-Yi Yu, Rei-Lin Chu | 2021-10-19 |
| 11152568 | Top-electrode barrier layer for RRAM | Hsing-Lien Lin, Fa-Shen Jiang | 2021-10-19 |
| 11131025 | Wireless camera wafer for vacuum chamber diagnostics | Tzu-Chung Tsai, Hai-Dang Trinh | 2021-09-28 |
| 11094583 | Method of forming a device having a doping layer and device formed | Cheng-Ta Wu | 2021-08-17 |
| 11081563 | Formation of silicide contacts in semiconductor devices | Yan-Ming Tsai, Wei-Jung Lin, Fang Chen | 2021-08-03 |
| 10950490 | Semiconductor device having isolation structures with different thicknesses | Cheng-Ta Wu, Sen-Hong Syue, Cheng-Po Chau | 2021-03-16 |
| 10910560 | RRAM structure | Hai-Dang Trinh, Hsing-Lien Lin, Fa-Shen Jiang | 2021-02-02 |
| 10879354 | Semiconductor device and forming method thereof | Cheng-Ta Wu | 2020-12-29 |
| 10868247 | Semiconductor device structure with multiple resistance variable layers | Hai-Dang Trinh, Hsing-Lien Lin, Cheng-Yuan Tsai | 2020-12-15 |
| 10818544 | Method to enhance electrode adhesion stability | Hsing-Lien Lin, Hai-Dang Trinh, Fa-Shen Jiang | 2020-10-27 |
| 10748798 | Wireless camera wafer for vacuum chamber diagnostics | Tzu-Chung Tsai, Hai-Dang Trinh | 2020-08-18 |
| 10672909 | Strained gate semiconductor device having an interlayer dielectric doped with oxygen and a large species material | Cheng-Ta Wu, Shiu-Ko JangJian, Kun-Tzu Lin, Lan Chang | 2020-06-02 |
| 10658581 | Semiconductor device structure with multiple resistance variable layers | Hai-Dang Trinh, Hsing-Lien Lin, Cheng-Yuan Tsai | 2020-05-19 |
| 10535568 | Method for manufacturing multi-voltage devices using high-K-metal-gate (HKMG) technology | Chun-Han Tsao, Cheng-Yuan Tsai, Yi-Huan Chen | 2020-01-14 |
| 10177043 | Method for manufacturing multi-voltage devices using high-K-metal-gate (HKMG) technology | Chun-Han Tsao, Cheng-Yuan Tsai, Yi-Huan Chen | 2019-01-08 |
| 10157780 | Method of forming a device having a doping layer and device formed | Cheng-Ta Wu | 2018-12-18 |
| 10157770 | Semiconductor device having isolation structures with different thickness and method of forming the same | Cheng-Ta Wu, Sen-Hong Syue, Cheng-Po Chau | 2018-12-18 |
| 10128115 | Method of forming ultra-shallow junctions in semiconductor devices | Chun-Feng Nieh, Mao-Rong Yeh, Chun Hsiung Tsai | 2018-11-13 |
| 10020401 | Methods for straining a transistor gate through interlayer dielectric (ILD) doping schemes | Cheng-Ta Wu, Shiu-Ko JangJian, Kun-Tzu Lin, Lan Chang | 2018-07-10 |
| 9997633 | Semiconductor devices, FinFET devices and methods of forming the same | Ru-Shang Hsiao | 2018-06-12 |
| 9929268 | Fin field effect transistor and method for fabricating the same | Ru-Shang Hsiao, Hung-Pin Chen, Sen-Hong Syue, Chi-Cherng Jeng | 2018-03-27 |