Issued Patents All Time
Showing 1–25 of 159 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12336217 | Flat STI surface for gate oxide uniformity in Fin FET devices | Cheng-Ta Wu, Cheng-Wei Chen, Ting-Chun Wang | 2025-06-17 |
| 12315761 | Interconnection structure and manufacturing method thereof | Chung-Wen Wu, Chien-Wen Chiu, Chien-Chung Chen | 2025-05-27 |
| 12272708 | Image sensor device | Chih-Nan Wu, Chun Che Lin, Yu-Ku Lin | 2025-04-08 |
| 12119267 | Method for manufacturing semiconductor structure | Chen Cheng Chou, Cheng-Ta Wu | 2024-10-15 |
| 12100767 | Strained gate semiconductor device having an interlayer dielectric doped with large species material | Cheng-Ta Wu, Chii-Ming Wu, Kun-Tzu Lin, Lan Chang | 2024-09-24 |
| 12087643 | Structure and formation method of fin-like field effect transistor | Tzu kai Lin, Chi-Cherng Jeng | 2024-09-10 |
| 12046662 | Semiconductor device structure with barrier layer | Chia-Yang Wu, Ting-Chun Wang, Yung-Si Yu | 2024-07-23 |
| 12009262 | Semiconductor device having planar transistor and FinFET | Wei-Barn Chen, Ting-Huang Kuo, Chi-Cherng Jeng, Kuang-Yao Lo | 2024-06-11 |
| 11949014 | Fin field effect transistor (FinFet) device structure and method for forming the same | Wei-Barn Chen, Ting-Huang Kuo, Chi-Cherng Jeng | 2024-04-02 |
| 11942419 | Etch stop layer in integrated circuits | Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu | 2024-03-26 |
| 11929328 | Conductive contact having barrier layers with different depths | Chia-Yang Wu, Ting-Chun Wang, Yung-Si Yu | 2024-03-12 |
| 11784240 | Semiconductor device structure with barrier layer | Chia-Yang Wu, Ting-Chun Wang, Yung-Si Yu | 2023-10-10 |
| 11670704 | Semiconductor device structure with barrier layer | Chia-Yang Wu, Ting-Chun Wang, Yung-Si Yu | 2023-06-06 |
| 11603602 | Method for controlling electrochemical deposition to avoid defects in interconnect structures | Jun-Nan Nian, Yu-Ren PENG, Yao-Hsiang Liang, Ting-Chun Wang | 2023-03-14 |
| 11598016 | Electrochemical plating system and method of using | Jun-Nan Nian, Ting-Chun Wang, Ing-Ju Lee | 2023-03-07 |
| 11551979 | Method for manufacturing semiconductor structure | Chen Cheng Chou, Cheng-Ta Wu | 2023-01-10 |
| 11522001 | Image sensor device | Chih-Nan Wu, Chun Che Lin, Yu-Ku Lin | 2022-12-06 |
| 11404368 | Etch stop layer in integrated circuits | Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu | 2022-08-02 |
| 11393727 | Structure and formation method of fin-like field effect transistor | Tzu kai Lin, Chi-Cherng Jeng | 2022-07-19 |
| 11329160 | FinFET gate structure | Cheng-Ta Wu, Chung-Ren Sun, Ming-Te Chen, Ting-Chun Wang, Jun Cheng | 2022-05-10 |
| 11328958 | Semiconductor device having planar transistor and FinFET | Wei-Barn Chen, Ting-Huang Kuo, Chi-Cherng Jeng, Kuang-Yao Lo | 2022-05-10 |
| 11309423 | Fin field effect transistor (finFET) device structure and method for forming the same | Wei-Barn Chen, Ting-Huang Kuo, Chi-Cherng Jeng | 2022-04-19 |
| 11271114 | Strained gate semiconductor device with oxygen-doped interlayer dielectric material | Cheng-Ta Wu, Chii-Ming Wu, Kun-Tzu Lin, Lan Chang | 2022-03-08 |
| 11271103 | Semiconductor device and manufacturing process thereof | Pohan Kung, Ying-Jing Lu, Chi-Cheng Hung, Yu-Sheng Wang | 2022-03-08 |
| 11270888 | Semiconductor device having source/drain with a protrusion | Chia-Yang Wu, Keng-Chuan Chang, Ting-Siang Su | 2022-03-08 |