Issued Patents All Time
Showing 1–25 of 80 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12283515 | Method and device to reduce epitaxial defects due to contact stress upon a semicondcutor wafer | Sih-Jie Liu, Che-Fu Chiu, Bau-Ming Wang, Huicheng Chang, Yee-Chia Yeo | 2025-04-22 |
| 12255101 | Ion implantation of nanostructures for nano-FET | Yu-Chang Lin, Huicheng Chang, Yee-Chia Yeo | 2025-03-18 |
| 12211701 | Gate structure of semiconductor device and method of manufacture | Tsan-Chun Wang | 2025-01-28 |
| 12211901 | Semiconductor device having a doped fin well | Bau-Ming Wang, Che-Fu Chiu, Huicheng Chang, Yee-Chia Yeo | 2025-01-28 |
| 12100738 | Semiconductor device with implant and method of manufacturing same | Yu-Chang Lin, Tien-Shun Chang, Huicheng Chang | 2024-09-24 |
| 12021082 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu | 2024-06-25 |
| 11984322 | Semiconductor device and manufacturing method thereof | Tien-Shun Chang, Huicheng Chang, Yee-Chia Yeo | 2024-05-14 |
| 11978634 | Reduce well dopant loss in FinFETs through co-implantation | Sih-Jie Liu, Huicheng Chang | 2024-05-07 |
| 11935793 | Dual dopant source/drain regions and methods of forming same | Yu-Chang Lin, Tien-Shun Chang, Huicheng Chang, Yee-Chia Yeo | 2024-03-19 |
| 11901235 | Ion implantation for nano-FET | Yu-Chang Lin, Huicheng Chang, Yee-Chia Yeo | 2024-02-13 |
| 11728219 | Method for fabricating a semiconductor device | Tsan-Chun Wang, Chiao-Ting Tai | 2023-08-15 |
| 11677012 | Method of manufacturing semiconductor devices | Tsan-Chun Wang, Chiao-Ting Tai | 2023-06-13 |
| 11670683 | Semiconductor device with implant and method of manufacturing same | Yu-Chang Lin, Tien-Shun Chang, Huicheng Chang | 2023-06-06 |
| 11640986 | Implantation and annealing for semiconductor device | Yu-Chang Lin, Tien-Shun Chang, Szu-Ying Chen, Sen-Hong Syue, Huicheng Chang | 2023-05-02 |
| 11574907 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu | 2023-02-07 |
| 11450757 | FinFET device and methods of forming | Yu-Chang Lin, Huicheng Chang, Wei-Ting Chien, Chih-Pin Tsao, Hou-Ju Li +1 more | 2022-09-20 |
| 11450743 | Method of forming a semiconductor device with implantation of impurities at high temperature | Bau-Ming Wang, Che-Fu Chiu, Huicheng Chang, Yee-Chia Yeo | 2022-09-20 |
| 11367621 | Semiconductor device and manufacturing method thereof | Tien-Shun Chang, Huicheng Chang, Yee-Chia Yeo | 2022-06-21 |
| 11361977 | Gate structure of semiconductor device and method of manufacture | Tsan-Chun Wang | 2022-06-14 |
| 11348835 | Ion implantation for nano-FET | Yu-Chang Lin, Huicheng Chang, Yee-Chia Yeo | 2022-05-31 |
| 11348792 | Reduce well dopant loss in FinFETs through co-implantation | Sih-Jie Liu, Huicheng Chang | 2022-05-31 |
| 11133415 | Gradient doped region of recessed Fin forming a FinFET device | Jyun-Hao Lin, Yu-Chang Lin, Huicheng Chang | 2021-09-28 |
| 11127817 | Formation of semiconductor device structure by implantation | Tsan-Chun Wang, Chiao-Ting Tai, Che-Fu Chiu | 2021-09-21 |
| 11088249 | Semiconductor device with implant and method of manufacturing same | Yu-Chang Lin, Tien-Shun Chang, Huicheng Chang | 2021-08-10 |
| 11056573 | Implantation and annealing for semiconductor device | Yu-Chang Lin, Tien-Shun Chang, Szu-Ying Chen, Sen-Hong Syue, Huicheng Chang | 2021-07-06 |