Issued Patents All Time
Showing 26–50 of 80 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11043580 | Method of manufacturing semiconductor devices | Tsan-Chun Wang, Chiao-Ting Tai | 2021-06-22 |
| 11031293 | Method for fabricating a semiconductor device | Tsan-Chun Wang, Chiao-Ting Tai | 2021-06-08 |
| 11011428 | Method for fabricating a semiconductor device | Tsan-Chun Wang, Chiao-Ting Tai | 2021-05-18 |
| 10930507 | Reduce well dopant loss in FinFETs through co-implantation | Sih-Jie Liu, Huicheng Chang | 2021-02-23 |
| 10916546 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu | 2021-02-09 |
| 10832913 | Method and apparatus for forming semiconductor structure | Tsan-Chun Wang, Chiao-Ting Tai, Che-Fu Chiu | 2020-11-10 |
| 10770570 | FinFET device and methods of forming | Yu-Chang Lin, Huicheng Chang, Wei-Ting Chien, Chih-Pin Tsao, Hou-Ju Li +1 more | 2020-09-08 |
| 10763363 | Gradient doped region of recessed fin forming a FinFET device | Jyun-Hao Lin, Huicheng Chang, Yu-Chang Lin | 2020-09-01 |
| 10741412 | Gate structure of semiconductor device | Tsan-Chun Wang | 2020-08-11 |
| 10714598 | Method of manufacturing semiconductor device | Tsan-Chun Wang, Chiao-Ting Tai | 2020-07-14 |
| 10714344 | Mask formation by selectively removing portions of a layer that have not been implanted | Tien-Shun Chang, Huicheng Chang | 2020-07-14 |
| 10529861 | FinFET structures and methods of forming the same | Yu-Chang Lin, Wei-Ting Chien, Wen-Li Chiu, Huicheng Chang, Chun-Sheng Liang | 2020-01-07 |
| 10515966 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu | 2019-12-24 |
| 10510619 | Semiconductor structure and method for manufacturing the same | Yu-Chang Lin, Shih-Hsiang Chiu, Tien-Shun Chang, Huicheng Chang | 2019-12-17 |
| 10460940 | Mask formation by selectively removing portions of a layer that have not been implanted | Tien-Shun Chang, Huicheng Chang | 2019-10-29 |
| 10326003 | FinFET device and methods of forming | Chia-Cheng Chen, Huicheng Chang, Liang-Yin Chen, Li-Ting Wang, Wan-Yi Kao +1 more | 2019-06-18 |
| 10163657 | Semiconductor device and method of manufacture | Tsan-Chun Wang | 2018-12-25 |
| 10128115 | Method of forming ultra-shallow junctions in semiconductor devices | Mao-Rong Yeh, Chun Hsiung Tsai, Chii-Ming Wu | 2018-11-13 |
| 10115808 | finFET device and methods of forming | Yu-Chang Lin, Huicheng Chang, Tien-Shun Chang, Wei-Ting Chien, Chih-Pin Tsao +1 more | 2018-10-30 |
| 10056383 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu | 2018-08-21 |
| 10049856 | High temperature intermittent ion implantation | Hsin-Wei Wu, Yu Chi-Fu, Hsing-Jui Lee, Tsun-Jen Chan | 2018-08-14 |
| 9741800 | III-V multi-channel FinFETs | Hung-Ta Lin, Chung-Yi Yu, Chi-Ming Chen | 2017-08-22 |
| 9698057 | Method of manufacturing strained source/drain structures | Ming-Huan Tsai, Wei-Han Fan, Yimin Huang, Chun-Fai Cheng, Han-Ting Tsai +1 more | 2017-07-04 |
| 9653581 | Semiconductor device and method of making | Wen-Tai Lu, Hou-Yu Chen, Yu-Chang Lin | 2017-05-16 |
| 9634126 | Formation of high quality Fin in 3D structure by way of two-step implantation | Hsin-Wei Wu, Tsun-Jen Chan, Yu-Chang Lin | 2017-04-25 |