Issued Patents All Time
Showing 51–75 of 80 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9607838 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu | 2017-03-28 |
| 9525024 | Methods for introducing carbon to a semiconductor structure and structures formed thereby | Yu Su, Huang-Ming Chen, Pei-Chao Su | 2016-12-20 |
| 9425290 | Formation of high quality fin in 3D structure by way of two-step implantation | Hsin-Wei Wu, Tsun-Jen Chan, Yu-Chang Lin | 2016-08-23 |
| 9373695 | Method for improving selectivity of epi process | Kuan-Yu Chen, Hsien-Hsin Lin, Hsueh-Chang Sung, Chien-Chang Su, Tsz-Mei Kwok | 2016-06-21 |
| 9343312 | High temperature intermittent ion implantation | Hsin-Wei Wu, Tsun-Jen Chan, Hsing-Jui Lee, Yu-Chi Fu | 2016-05-17 |
| 9252271 | Semiconductor device and method of making | Wen-Tai Lu, Hou-Yu Chen, Yu-Chang Lin | 2016-02-02 |
| 9202693 | Fabrication of ultra-shallow junctions | Li-Ting Wang, Chong-Wai Lo | 2015-12-01 |
| 9123564 | Semiconductor device with conformal doping and method of making | Yu-Chang Lin, Wen-Tai Lu, Li-Ting Wang, Hou-Yu Chen, Huicheng Chang | 2015-09-01 |
| 9105570 | Methods for introducing carbon to a semiconductor structure | Yu Su, Huang-Ming Chen, Pei-Chao Su | 2015-08-11 |
| 9099388 | III-V multi-channel FinFETs | Hung-Ta Lin, Chung-Yi Yu, Chi-Ming Chen | 2015-08-04 |
| 9099495 | Formation of high quality fin in 3D structure by way of two-step implantation | Hsin-Wei Wu, Tsun-Jen Chan, Yu-Chang Lin | 2015-08-04 |
| 9048253 | Method of manufacturing strained source/drain structures | Ming-Huan Tsai, Wei-Han Fan, Yimin Huang, Chun-Fai Cheng, Han-Ting Tsai +1 more | 2015-06-02 |
| 8629013 | Junction leakage reduction through implantation | Chung-Yi Yu, Hung-Ta Lin | 2014-01-14 |
| 8629037 | Forming a protective film on a back side of a silicon wafer in a III-V family fabrication process | Chung-Yi Yu, Hung-Ta Lin | 2014-01-14 |
| 8569139 | Method of manufacturing strained source/drain structures | Ming-Huan Tsai, Wei-Han Fan, Yimin Huang, Chun-Fai Cheng, Han-Ting Tsai +1 more | 2013-10-29 |
| 8497177 | Method of making a FinFET device | Huicheng Chang, Jeff J. Xu, Hung-Ta Lin | 2013-07-30 |
| 8487354 | Method for improving selectivity of epi process | Kuan-Yu Chen, Hsien-Hsin Lin, Hsueh-Chang Sung, Chien-Chang Su, Tsz-Mei Kwok | 2013-07-16 |
| 8404546 | Source/drain carbon implant and RTA anneal, pre-SiGe deposition | Wei-Yen Woon, Ching-Yi Chen, Hsun Chang, Chung-Ru Yang, Li-Te Lin | 2013-03-26 |
| 8405160 | Multi-strained source/drain structures | Chun-Fai Cheng, Fung Ka Hing, Ming-Huan Tsai, Yimin Huang, Han-Ting Tsai +1 more | 2013-03-26 |
| 8273633 | Method of enhancing dopant activation without suffering additional dopant diffusion | Keh-Chiang Kuo, Chien-Hao Chen, Li-Ping Huang, Hsun Chang, Li-Ting Wang +2 more | 2012-09-25 |
| 8212253 | Shallow junction formation and high dopant activation rate of MOS devices | Keh-Chiang Ku, Nai-Han Cheng, Chi-Chun Chen, Li-Te Lin | 2012-07-03 |
| 8039375 | Shallow junction formation and high dopant activation rate of MOS devices | Keh-Chiang Ku, Nai-Han Cheng, Chi-Chun Chen, Li-Te Lin | 2011-10-18 |
| 7994016 | Method for obtaining quality ultra-shallow doped regions and device having same | Chun Hsiung Tsai, Da-Wen Lin, Chien-Tai Chan | 2011-08-09 |
| 7838887 | Source/drain carbon implant and RTA anneal, pre-SiGe deposition | Wei-Yen Woon, Ching-Yi Chen, Hsun Chang, Chung-Ru Yang, Li-Te Lin | 2010-11-23 |
| 7741699 | Semiconductor device having ultra-shallow and highly activated source/drain extensions | Keh-Chiang Ku, Li-Ping Huang, Chih-Chiang Wang, Chien-Hao Chen, Hsun Chang +3 more | 2010-06-22 |