Issued Patents All Time
Showing 1–25 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432903 | Semiconductor structure and method for fabricating same | Zhicheng Shi, Xinran Liu, Ruiqi Zhang | 2025-09-30 |
| 12376290 | Semiconductor structure having buried word line structure with dielectric layers of different dielectric constants, and manufacturing method thereof | Yongli Zhao, Zhicheng Shi, Yachao XU | 2025-07-29 |
| 12356607 | Semiconductor structure and manufacturing method thereof | Renhu Li, Ming-Hung Hsieh, Zhicheng Shi | 2025-07-08 |
| 12284800 | Semiconductor structure and method for manufacturing semiconductor structure | Gongyi Wu, Longyang Chen | 2025-04-22 |
| 12283516 | Semiconductor device and method for manufacturing the same | Gongyi Wu, Youquan YU | 2025-04-22 |
| 12266683 | Capacitor structure and method of manufacturing same, and memory | Gongyi Wu, Hongkun SHEN | 2025-04-01 |
| 12224323 | Fabrication method of buried wordline structure | Hongkun SHEN | 2025-02-11 |
| 12213309 | Semiconductor device and manufacturing method thereof | Gongyi Wu, Xin Xin | 2025-01-28 |
| 12148654 | Semiconductor structure including a trench having a high aspect ratio formed by etching and its manufacturing method as applied to formation of a capacitor in the semiconductor structure | MingHung Hsieh | 2024-11-19 |
| 12114478 | Semiconductor structure and method for preparing same | Gongyi Wu, Longyang Chen | 2024-10-08 |
| 12021082 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen | 2024-06-25 |
| 11984472 | Double-sided capacitor structure and method for forming the same | — | 2024-05-14 |
| 11980020 | Semiconductor structure and forming method thereof | — | 2024-05-07 |
| 11935925 | Method for manufacturing semiconductor structure and semiconductor structure | Gongyi Wu, Youquan YU | 2024-03-19 |
| 11916102 | Double-sided capacitor structures and forming methods thereof | Wenjia Hu, Han-Min Wu | 2024-02-27 |
| 11894419 | Double-sided capacitor and fabrication method thereof | — | 2024-02-06 |
| 11877440 | Bit line structure including ohmic contact and forming method thereof | Gongyi Wu, Penghui Xu | 2024-01-16 |
| 11869930 | Method for forming semiconductor structure and semiconductor structure | — | 2024-01-09 |
| 11864378 | Semiconductor device and method for manufacturing semiconductor device | Gongyi Wu, Hongkun SHEN, Qiuhu PANG | 2024-01-02 |
| 11855089 | Method and structure for FinFET devices | Chia-Wei Soong, Hou-Yu Chen | 2023-12-26 |
| 11723190 | Capacitor structure and method for manufacturing same | Chaojun Sheng | 2023-08-08 |
| 11574907 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen | 2023-02-07 |
| 11569230 | Method and structure for FinFET devices | Chia-Wei Soong, Hou-Yu Chen | 2023-01-31 |
| 11489054 | Raised epitaxial LDD in MuGFETs and methods for forming the same | Hou-Yu Chen, Shyh-Horng Yang | 2022-11-01 |
| 10964815 | CMOS finFET with doped spacers and method for forming the same | Hong-Nien Lin, Ming-Heng Tsai, Chun-Sheng Liang, Jeng-Ya David Yeh | 2021-03-30 |