Issued Patents All Time
Showing 26–34 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10916546 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen | 2021-02-09 |
| 10840346 | Raised epitaxial LDD in MuGFETs and methods for forming the same | Hou-Yu Chen, Shyh-Horng Yang | 2020-11-17 |
| 10797052 | Method and structure for FinFET devices | Chia-Wei Soong, Hou-Yu Chen | 2020-10-06 |
| 10515966 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen | 2019-12-24 |
| 10516024 | Raised epitaxial LDD in MuGFETs and methods for forming the same | Hou-Yu Chen, Shyh-Horng Yang | 2019-12-24 |
| 10157924 | Method and structure for FinFET devices | Chia-Wei Soong, Hou-Yu Chen | 2018-12-18 |
| 10056383 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen | 2018-08-21 |
| 9607838 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen | 2017-03-28 |
| 9553172 | Method and structure for FinFET devices | Chia-Wei Soong, Hou-Yu Chen | 2017-01-24 |