JL

Jyun-Hao Lin

TSMC: 2 patents #6,667 of 12,232Top 55%
📍 Tainan, TW: #2,005 of 4,566 inventorsTop 45%
Overall (All Time): #1,888,944 of 4,157,543Top 50%
2
Patents All Time

Issued Patents All Time

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
11133415 Gradient doped region of recessed Fin forming a FinFET device Chun-Feng Nieh, Yu-Chang Lin, Huicheng Chang 2021-09-28
10763363 Gradient doped region of recessed fin forming a FinFET device Chun-Feng Nieh, Huicheng Chang, Yu-Chang Lin 2020-09-01