Issued Patents All Time
Showing 1–25 of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408448 | Deep trench isolation structure and methods for fabrication thereof | Chia-Wei Hu, Hai-Dang Trinh, Min-Ying Tsai, Ching-I Li, Hsun-Chung Kuang +1 more | 2025-09-02 |
| 12364171 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang | 2025-07-15 |
| 12356631 | FeRAM with laminated ferroelectric film and method forming same | Yi Yang Wei, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai, Hai-Dang Trinh | 2025-07-08 |
| 12349366 | Interface film to mitigate size effect of memory device | Yi Yang Wei, Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2025-07-01 |
| 12295270 | RRAM device with improved performance | Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin | 2025-05-06 |
| 12295267 | Semiconductor device and method of manufacturing the same | Hai-Dang Trinh, Hsun-Chung Kuang | 2025-05-06 |
| 12239035 | Resistive memory cell having a low forming voltage | Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin, Tzu-Chung Tsai, Fa-Shen Jiang | 2025-02-25 |
| 12232434 | Multi-doped data storage structure configured to improve resistive memory cell performance | Hai-Dang Trinh, Fa-Shen Jiang, Hsun-Chung Kuang | 2025-02-18 |
| 12160995 | Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer | Tzu-Yu Lin, Yi Yang Wei, Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-12-03 |
| 12137572 | Ferroelectric memory device and method of manufacturing the same | Yi Yang Wei, Tzu-Yu Lin, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang | 2024-11-05 |
| 12127483 | Doped sidewall spacer/etch stop layer for memory | Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-10-22 |
| 12075626 | Memory window of MFM MOSFET for small cell size | Hai-Dang Trinh, Yi Yang Wei, Fa-Shen Jiang, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-08-27 |
| 12069867 | Ferroelectric random access memory device with seed layer | Hsing-Lien Lin, Hsun-Chung Kuang, Yi Yang Wei | 2024-08-20 |
| 12035537 | Interface film to mitigate size effect of memory device | Yi Yang Wei, Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-07-09 |
| 11967611 | Multilayer structure, capacitor structure and electronic device | Hai-Dang Trinh, Yi Yang Wei, Fa-Shen Jiang, Hsun-Chung Kuang | 2024-04-23 |
| 11916127 | Multi-layer electrode to improve performance of ferroelectric memory device | Yi Yang Wei, Hsin-Yu Lai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang | 2024-02-27 |
| 11895933 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang | 2024-02-06 |
| 11844226 | FeRAM with laminated ferroelectric film and method forming same | Yi Yang Wei, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai, Hai-Dang Trinh | 2023-12-12 |
| 11737280 | Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer | Tzu-Yu Lin, Yi Yang Wei, Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-08-22 |
| 11723212 | Memory window of MFM MOSFET for small cell size | Hai-Dang Trinh, Yi Yang Wei, Fa-Shen Jiang, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-08-08 |
| 11665909 | FeRAM with laminated ferroelectric film and method forming same | Yi Yang Wei, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai, Hai-Dang Trinh | 2023-05-30 |
| 11527713 | Top electrode via with low contact resistance | Hai-Dang Trinh, Hsun-Chung Kuang, Tzu-Chung Tsai, Yao-Wen Chang | 2022-12-13 |
| 11527717 | Resistive memory cell having a low forming voltage | Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin, Tzu-Chung Tsai, Fa-Shen Jiang | 2022-12-13 |
| 11430951 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang | 2022-08-30 |
| 11404638 | Multi-doped data storage structure configured to improve resistive memory cell performance | Hai-Dang Trinh, Fa-Shen Jiang, Hsun-Chung Kuang | 2022-08-02 |