YW

Yi Yang Wei

TSMC: 14 patents #2,167 of 12,232Top 20%
Overall (All Time): #334,965 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
12356631 FeRAM with laminated ferroelectric film and method forming same Bi-Shen Lee, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai, Hai-Dang Trinh 2025-07-08
12349366 Interface film to mitigate size effect of memory device Bi-Shen Lee, Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai 2025-07-01
12160995 Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer Bi-Shen Lee, Tzu-Yu Lin, Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai 2024-12-03
12137572 Ferroelectric memory device and method of manufacturing the same Tzu-Yu Lin, Bi-Shen Lee, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang 2024-11-05
12075626 Memory window of MFM MOSFET for small cell size Hai-Dang Trinh, Bi-Shen Lee, Fa-Shen Jiang, Hsun-Chung Kuang, Cheng-Yuan Tsai 2024-08-27
12069867 Ferroelectric random access memory device with seed layer Bi-Shen Lee, Hsing-Lien Lin, Hsun-Chung Kuang 2024-08-20
12035537 Interface film to mitigate size effect of memory device Bi-Shen Lee, Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai 2024-07-09
11967611 Multilayer structure, capacitor structure and electronic device Hai-Dang Trinh, Fa-Shen Jiang, Bi-Shen Lee, Hsun-Chung Kuang 2024-04-23
11916127 Multi-layer electrode to improve performance of ferroelectric memory device Bi-Shen Lee, Hsin-Yu Lai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang 2024-02-27
11844226 FeRAM with laminated ferroelectric film and method forming same Bi-Shen Lee, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai, Hai-Dang Trinh 2023-12-12
11737280 Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer Bi-Shen Lee, Tzu-Yu Lin, Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai 2023-08-22
11723212 Memory window of MFM MOSFET for small cell size Hai-Dang Trinh, Bi-Shen Lee, Fa-Shen Jiang, Hsun-Chung Kuang, Cheng-Yuan Tsai 2023-08-08
11665909 FeRAM with laminated ferroelectric film and method forming same Bi-Shen Lee, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai, Hai-Dang Trinh 2023-05-30
11393833 Ferroelectric random access memory device with seed layer Bi-Shen Lee, Hsing-Lien Lin, Hsun-Chung Kuang 2022-07-19