Issued Patents All Time
Showing 26–46 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11723212 | Memory window of MFM MOSFET for small cell size | Hai-Dang Trinh, Yi Yang Wei, Bi-Shen Lee, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-08-08 |
| 11716915 | Top-electrode barrier layer for RRAM | Hsing-Lien Lin, Chii-Ming Wu | 2023-08-01 |
| 11716913 | Data storage structure for improving memory cell reliability | Hai-Dang Trinh, Chii-Ming Wu, Cheng-Yuan Tsai, Tzu-Chung Tsai | 2023-08-01 |
| 11545202 | Circuit design and layout with high embedded memory density | Hsia-Wei Chen, Hsun-Chung Kuang, Hai-Dang Trinh, Cheng-Yuan Tsai | 2023-01-03 |
| 11532698 | Diffusion barrier layer in top electrode to increase break down voltage | Hsing-Lien Lin, Chii-Ming Wu, Hai-Dang Trinh | 2022-12-20 |
| 11527717 | Resistive memory cell having a low forming voltage | Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin, Tzu-Chung Tsai, Bi-Shen Lee | 2022-12-13 |
| 11482668 | RRAM structure | Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin | 2022-10-25 |
| 11476416 | Semiconductor device and method for manufacturing the same | Hai-Dang Trinh, Hsing-Lien Lin, Chii-Ming Wu | 2022-10-18 |
| 11437573 | Semiconductor device and method for manufacturing the same | Hai-Dang Trinh, Hsing-Lien Lin | 2022-09-06 |
| 11430951 | Resistive memory cell with switching layer comprising one or more dopants | Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang, Bi-Shen Lee | 2022-08-30 |
| 11404638 | Multi-doped data storage structure configured to improve resistive memory cell performance | Bi-Shen Lee, Hai-Dang Trinh, Hsun-Chung Kuang | 2022-08-02 |
| 11309491 | Data storage structure for improving memory cell reliability | Hai-Dang Trinh, Chii-Ming Wu, Cheng-Yuan Tsai, Tzu-Chung Tsai | 2022-04-19 |
| 11165021 | RRAM device with improved performance | Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Bi-Shen Lee | 2021-11-02 |
| 11152568 | Top-electrode barrier layer for RRAM | Hsing-Lien Lin, Chii-Ming Wu | 2021-10-19 |
| 11038101 | Semiconductor structure having a phase change memory device | Hsing-Lien Lin, Hai-Dang Trinh | 2021-06-15 |
| 11024800 | Film scheme to improve peeling in chalcogenide based PCRAM | Hai-Dang Trinh, Chin-Wei Liang, Hsing-Lien Lin | 2021-06-01 |
| 10916697 | Memory device and method of manufacturing the same | Hsing-Lien Lin | 2021-02-09 |
| 10910560 | RRAM structure | Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin | 2021-02-02 |
| 10818544 | Method to enhance electrode adhesion stability | Hsing-Lien Lin, Chii-Ming Wu, Hai-Dang Trinh | 2020-10-27 |
| 10622555 | Film scheme to improve peeling in chalcogenide based PCRAM | Hai-Dang Trinh, Chin-Wei Liang, Hsing-Lien Lin | 2020-04-14 |
| 10043972 | Conductive-bridging random access memory | Tseung-Yuen Tseng, Tsung-Ling Tsai | 2018-08-07 |