Issued Patents All Time
Showing 1–25 of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10957780 | Non-uniform gate dielectric for U-shape MOSFET | Effendi Leobandung, Philip J. Oldiges | 2021-03-23 |
| 10937871 | III-V transistor device with self-aligned doped bottom barrier | Cheng-Wei Cheng, Amlan Majumdar, Yanning Sun | 2021-03-02 |
| 10680085 | Transistor structure with varied gate cross-sectional area | Dominic J. Schepis, Alexander Reznicek, Qiqing C. Ouyang | 2020-06-09 |
| 10643907 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Qiqing C. Ouyang, Alexander Reznicek, Dominic J. Schepis | 2020-05-05 |
| 10374042 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Qiqing C. Ouyang, Alexander Reznicek | 2019-08-06 |
| 10262999 | High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Vijay Narayanan | 2019-04-16 |
| 10256319 | Non-uniform gate dielectric for U-shape MOSFET | Effendi Leobandung, Philip J. Oldiges | 2019-04-09 |
| 10217745 | High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Vijay Narayanan | 2019-02-26 |
| 10204837 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Qiqing C. Ouyang, Alexander Reznicek, Dominic J. Schepis | 2019-02-12 |
| 10192888 | Metallized junction FinFET structures | Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin | 2019-01-29 |
| 10176990 | SiGe FinFET with improved junction doping control | Qiqing C. Ouyang, Alexander Reznicek | 2019-01-08 |
| 10002798 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Qiqing C. Ouyang, Alexander Reznicek, Dominic J. Schepis | 2018-06-19 |
| 10002871 | High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Vijay Narayanan | 2018-06-19 |
| 9972711 | Reduced resistance short-channel InGaAs planar MOSFET | Qiqing C. Ouyang, Alexander Reznicek | 2018-05-15 |
| 9966457 | Transistor structure with varied gate cross-sectional area | Dominic J. Schepis, Alexander Reznicek, Qiqing C. Ouyang | 2018-05-08 |
| 9941363 | III-V transistor device with self-aligned doped bottom barrier | Cheng-Wei Cheng, Amlan Majumdar, Yanning Sun | 2018-04-10 |
| 9859279 | High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Vijay Narayanan | 2018-01-02 |
| 9812556 | Semiconductor device and method of manufacturing the semiconductor device | Shogo Mochizuki, Gen Tsutsui, Raghavasimhan Sreenivasan, Qiqing C. Ouyang, Alexander Reznicek | 2017-11-07 |
| 9773903 | Asymmetric III-V MOSFET on silicon substrate | Cheng-Wei Cheng, Effendi Leobandung, Amlan Majumdar, Renee T. Mo, Yanning Sun | 2017-09-26 |
| 9755078 | Structure and method for multi-threshold voltage adjusted silicon germanium alloy devices with same silicon germanium content | Pouya Hashemi, Christine Qiqing Ouyang, Alexander Reznicek | 2017-09-05 |
| 9748114 | Method for forming through silicon via in N+ epitaxy wafers with reduced parasitic capacitance | Kangguo Cheng, Subramanian S. Iyer, Ali Khakifirooz | 2017-08-29 |
| 9741807 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Qiqing C. Ouyang, Alexander Reznicek | 2017-08-22 |
| 9722031 | Reduced current leakage semiconductor device | Cheng-Wei Cheng, Young-Hee Kim, Effendi Leobandung, Yanning Sun | 2017-08-01 |
| 9679969 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Qiqing C. Ouyang, Alexander Reznicek | 2017-06-13 |
| 9673190 | ESD device compatible with bulk bias capability | Kangguo Cheng, Bruce B. Doris, Terence B. Hook, Ali Khakifirooz, Balasubramanian Pranatharthiharan +1 more | 2017-06-06 |