FS

Frank Seliger

Globalfoundries: 10 patents #365 of 4,424Top 9%
IBM: 6 patents #16,453 of 70,183Top 25%
AM AMD: 3 patents #3,141 of 9,279Top 35%
Overall (All Time): #239,681 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8987103 Multi-step deposition of a spacer material for reducing void formation in a dielectric material of a contact level of a semiconductor device Markus Lenski, Kerstin Ruttloff, Volker Jaschke, Ralf Otterbach 2015-03-24
8932930 Enhancing integrity of a high-K gate stack by protecting a liner at the gate bottom during gate head exposure Sven Beyer, Gunter Grasshoff 2015-01-13
8765542 Methods of forming a semiconductor device while preventing or reducing loss of active area and/or isolation regions Joachim Patzer, Markus Lenski, Stephan Kronholz 2014-07-01
8765559 Sophisticated gate electrode structures formed by cap layer removal with reduced loss of embedded strain-inducing semiconductor material Stephan Kronholz, Gunda Beernink, Markus Lenski, Frank Richter 2014-07-01
8561446 Method and device for fabricating bonding wires on the basis of microelectronic manufacturing techniques Matthias Lehr, Frank Kuechenmeister 2013-10-22
8560857 Information processing apparatus, a server apparatus, a method of an information processing apparatus, a method of a server apparatus, and an apparatus executable program Seiji Munetoh, Hiroshi Maruyama, Nataraj Nagaratnam 2013-10-15
8338306 Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors Jens Heinrich, Ralf Richter, Katja Steffen, Johannes Groschopf, Andreas Ott +2 more 2012-12-25
8338284 Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacer Kai Frohberg, Hartmut Ruelke, Volker Jaschke, Joerg Hohage 2012-12-25
8329549 Enhancing integrity of a high-k gate stack by protecting a liner at the gate bottom during gate head exposure Sven Beyer, Gunter Grasshoff 2012-12-11
8329526 Cap removal in a high-k metal gate electrode structure by using a sacrificial fill material Jens Heinrich, Ralf Richter, Markus Lenski 2012-12-11
8258062 Cap layer removal in a high-K metal gate stack by using an etch process Ralf Richter, Martin Mazur 2012-09-04
8171295 Information processing apparatus, a server apparatus, a method of an information processing apparatus, a method of a server apparatus, and an apparatus executable process Seiji Munetoh, Hiroshi Maruyama, Nataraj Nagaratnam 2012-05-01
7981740 Enhanced cap layer integrity in a high-K metal gate stack by using a hard mask for offset spacer patterning Markus Lenski, Kerstin Ruttloff, Martin Mazur, Ralf Otterbach 2011-07-19
7951677 Corner rounding in a replacement gate approach based on a sacrificial fill material applied prior to work function metal deposition Jens Heinrich, Thomas Werner, Frank Richter 2011-05-31
7757950 Election system enabling coercion-free remote voting Bernard Van Acker 2010-07-20
7564977 System, method and program product for anonymous transfer of messages Anna Marino, Bernard Van Acker 2009-07-21
7490768 Election system enabling coercion-free remote voting Bernard Van Acker 2009-02-17
7375032 Semiconductor substrate thinning method for manufacturing thinned die Matthias Lehr, Marcel Wieland, Lothar Mergili, Frank Kuechenmeister 2008-05-20
6892301 Method and system for securely handling information between two information processing devices Uwe Hansmann 2005-05-10