Issued Patents All Time
Showing 426–450 of 482 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9484447 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Anand S. Murthy, Mark Armstrong, Rafael Rios +2 more | 2016-11-01 |
| 9466565 | Self-aligned contacts | Mark Bohr, Nadia M. Rahhai-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus +2 more | 2016-10-11 |
| 9461143 | Gate contact structure over active gate and method to fabricate same | Abhijit Jayant Pethe, Mark Bohr, Clair Webb, Harry Gomez, Annalisa Cappellani | 2016-10-04 |
| 9443980 | Pulsed laser anneal process for transistors with partial melt of a raised source-drain | Jacob Jensen, Mark Liu, Harold W. Kennel, Robert James | 2016-09-13 |
| 9397102 | III-V layers for N-type and P-type MOS source-drain contacts | Glenn A. Glass, Anand S. Murthy | 2016-07-19 |
| 9349810 | Selective germanium P-contact metalization through trench | Glenn A. Glass, Anand S. Murthy | 2016-05-24 |
| 9240322 | Method for forming superactive deactivation-resistant junction with laser anneal and multiple implants | Jacob Jensen, Harold W. Kennel, Robert James, Mark Liu | 2016-01-19 |
| 9224735 | Self-aligned contact metallization for reduced contact resistance | Glenn A. Glass, Anand S. Murthy | 2015-12-29 |
| 9224810 | CMOS nanowire structure | Seiyon Kim, Kelin J. Kuhn, Anand S. Murthy, Annalisa Cappellani, Stephen M. Cea +2 more | 2015-12-29 |
| 9219155 | Multi-threshold voltage devices and associated techniques and configurations | Joseph M. Steigerwald, Jenny Hu, Ian R. Post | 2015-12-22 |
| 9196704 | Selective laser annealing process for buried regions in a MOS device | Jacob Jensen, Mark Liu, Harold W. Kennel, Robert James | 2015-11-24 |
| 9184294 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Jack T. Kavalieros +1 more | 2015-11-10 |
| 9166004 | Semiconductor device contacts | Michael Haverty, Sadasivan Shankar, Seongjun Park | 2015-10-20 |
| 9153583 | III-V layers for N-type and P-type MOS source-drain contacts | Glenn A. Glass, Anand S. Murthy | 2015-10-06 |
| 9117791 | Selective germanium P-contact metalization through trench | Glenn A. Glass, Anand S. Murthy | 2015-08-25 |
| 9093513 | Self-aligned contacts | Mark Bohr, Nadia M. Rahhal-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus +2 more | 2015-07-28 |
| 9059024 | Self-aligned contact metallization for reduced contact resistance | Glenn A. Glass, Anand S. Murthy | 2015-06-16 |
| 9054178 | Self-aligned contacts | Mark Bohr, Nadia M. Rahhai-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus +2 more | 2015-06-09 |
| 9048260 | Method of forming a semiconductor device with tall fins and using hard mask etch stops | Ritesh Jhaveri, Bernard Sell | 2015-06-02 |
| 9041146 | Logic chip including embedded magnetic tunnel junctions | Kevin J. Lee, Joseph M. Steigerwald, John H. Epple, Yih Wang | 2015-05-26 |
| 9029221 | Semiconductor devices having three-dimensional bodies with modulated heights | Annalisa Cappellani, Kelin J. Kuhn, Rafael Rios, Aura Cecilia Davila Latorre | 2015-05-12 |
| 9006069 | Pulsed laser anneal process for transistors with partial melt of a raised source-drain | Jacob Jensen, Mark Liu, Harold W. Kennel, Robert James | 2015-04-14 |
| 8994104 | Contact resistance reduction employing germanium overlayer pre-contact metalization | Glenn A. Glass, Anand S. Murthy | 2015-03-31 |
| 8963579 | Spin torque magnetic integrated circuits and devices therefor | Dmitri E. Nikonov, George I. Bourianoff | 2015-02-24 |
| 8901537 | Transistors with high concentration of boron doped germanium | Anand S. Murthy, Glenn A. Glass, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros +3 more | 2014-12-02 |