Issued Patents All Time
Showing 101–125 of 304 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10651288 | Pseudomorphic InGaAs on GaAs for gate-all-around transistors | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Gilbert Dewey +2 more | 2020-05-12 |
| 10644137 | III-V finfet transistor with V-groove S/D profile for improved access resistance | Willy Rachmady, Gilbert Dewey, Sean T. Ma, Chandra S. Mohapatra, Sanaz K. Gardner +3 more | 2020-05-05 |
| 10644111 | Strained silicon layer with relaxed underlayer | Benjamin Chu-Kung, Van H. Le, Ashish Agrawal, Jack T. Kavalieros, Seung Hoon Sung +2 more | 2020-05-05 |
| 10636912 | FINFET transistor having a tapered subfin structure | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Chandra S. Mohapatra, Sean T. Ma +2 more | 2020-04-28 |
| 10593785 | Transistors having ultra thin fin profiles and their methods of fabrication | Sanaz K. Gardner, Willy Rachmady, Van H. Le, Seiyon Kim, Ashish Agrawal +1 more | 2020-03-17 |
| 10586848 | Apparatus and methods to create an active channel having indium rich side and bottom surfaces | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Gilbert Dewey +2 more | 2020-03-10 |
| 10580882 | Low band gap semiconductor devices having reduced gate induced drain leakage (GIDL) | Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Van H. Le, Seiyon Kim +1 more | 2020-03-03 |
| 10580865 | Transistor with a sub-fin dielectric region under a gate | Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Nadia M. Rahhal-Orabi, Jack T. Kavalieros +2 more | 2020-03-03 |
| 10573717 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2020-02-25 |
| 10559683 | Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +2 more | 2020-02-11 |
| 10546858 | Low damage self-aligned amphoteric FINFET tip doping | Jack T. Kavalieros, Chandra S. Mohapatra, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +2 more | 2020-01-28 |
| 10541305 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2020-01-21 |
| 10529808 | Dopant diffusion barrier for source/drain to curb dopant atom diffusion | Chandra S. Mohapatra, Harold W. Kennel, Glenn A. Glass, Will Rachmady, Gilbert Dewey +4 more | 2020-01-07 |
| 10497814 | III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same | Harold W. Kennel, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Anand S. Murthy +2 more | 2019-12-03 |
| 10475706 | Making a defect free fin based device in lateral epitaxy overgrowth region | Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Van H. Le +3 more | 2019-11-12 |
| 10461082 | Well-based integration of heteroepitaxial N-type transistors with P-type transistors | Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +2 more | 2019-10-29 |
| 10461193 | Apparatus and methods to create a buffer which extends into a gated region of a transistor | Chandra S. Mohapatra, Gilbert Dewey, Anand S. Murthy, Glenn A. Glass, Willy Rachmady +2 more | 2019-10-29 |
| 10446685 | High-electron-mobility transistors with heterojunction dopant diffusion barrier | Chandra S. Mohapatra, Harold W. Kennel, Gilbert Dewey, Willy Rachmady, Anand S. Murthy +2 more | 2019-10-15 |
| 10431690 | High electron mobility transistors with localized sub-fin isolation | Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +3 more | 2019-10-01 |
| 10411122 | Semiconductor device having group III-V material active region and graded gate dielectric | Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty | 2019-09-10 |
| 10411007 | High mobility field effect transistors with a band-offset semiconductor source/drain spacer | Gilbert Dewey, Willy Rachmady, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more | 2019-09-10 |
| 10403733 | Dielectric metal oxide cap for channel containing germanium | Gilbert Dewey, Ashish Agrawal, Benjamin Chu-Kung, Van H. Le, Willy Rachmady +2 more | 2019-09-03 |
| 10388764 | High-electron-mobility transistors with counter-doped dopant diffusion barrier | Chandra S. Mohapatra, Harold W. Kennel, Gilbert Dewey, Willy Rachmady, Anand S. Murthy +2 more | 2019-08-20 |
| 10367093 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more | 2019-07-30 |
| 10347767 | Transistor with a subfin layer | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Gilbert Dewey, Jack T. Kavalieros +1 more | 2019-07-09 |