Issued Patents All Time
Showing 126–150 of 304 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10340374 | High mobility field effect transistors with a retrograded semiconductor source/drain | Gilbert Dewey, Willy Rachmady, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more | 2019-07-02 |
| 10319646 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2019-06-11 |
| 10290709 | Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani, Willy Rachmady +2 more | 2019-05-14 |
| 10263074 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2019-04-16 |
| 10249742 | Offstate parasitic leakage reduction for tunneling field effect transistors | Van H. Le, Gilbert Dewey, Benjamin Chu-Kung, Ashish Agrawal, Willy Rachmady +8 more | 2019-04-02 |
| 10249740 | Ge nano wire transistor with GaAs as the sacrificial layer | Willy Rachmady, Van H. Le, Jack T. Kavalieros, Sanaz K. Gardner | 2019-04-02 |
| 10249490 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Niloy Mukherjee +7 more | 2019-04-02 |
| 10243078 | Carrier confinement for high mobility channel devices | Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani, Anand S. Murthy +3 more | 2019-03-26 |
| 10229997 | Indium-rich NMOS transistor channels | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +3 more | 2019-03-12 |
| 10211208 | High-mobility semiconductor source/drain spacer | Gilbert Dewey, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Chandra S. Mohapatra +2 more | 2019-02-19 |
| 10204989 | Method of fabricating semiconductor structures on dissimilar substrates | Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung +3 more | 2019-02-12 |
| 10186581 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2019-01-22 |
| 10181518 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2019-01-15 |
| 10141437 | Extreme high mobility CMOS logic | Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Amlan Majumdar +3 more | 2018-11-27 |
| 10121897 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy | 2018-11-06 |
| 10096709 | Aspect ratio trapping (ART) for fabricating vertical semiconductor devices | Van H. Le, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Ravi Pillarisetty +4 more | 2018-10-09 |
| 10096474 | Methods and structures to prevent sidewall defects during selective epitaxy | Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Sansaptak Dasgupta +6 more | 2018-10-09 |
| 10090405 | Semiconductor device having group III-V material active region and graded gate dielectric | Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty | 2018-10-02 |
| 10084043 | High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin | Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani, Anand S. Murthy +4 more | 2018-09-25 |
| 10020371 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more | 2018-07-10 |
| 9947780 | High electron mobility transistor (HEMT) and method of fabrication | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2018-04-17 |
| 9929273 | Apparatus and methods of forming fin structures with asymmetric profile | Willy Rachmady, Chandra S. Mohapatra, Gilbert Dewey, Nadia M. Rahhal-Orabi, Tahir Ghani +3 more | 2018-03-27 |
| 9905651 | GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more | 2018-02-27 |
| 9876014 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Jack T. Kavalieros, Marko Radosavljevic +5 more | 2018-01-23 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2018-01-09 |