Issued Patents All Time
Showing 51–75 of 304 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11476338 | Aluminum indium phosphide subfin germanium channel transistors | Willy Rachmady, Harold W. Kennel, Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros +1 more | 2022-10-18 |
| 11469323 | Ferroelectric gate stack for band-to-band tunneling reduction | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Sean T. Ma +2 more | 2022-10-11 |
| 11450527 | Engineering tensile strain buffer in art for high quality Ge channel | Van H. Le, Benjamin Chu-Kung, Willy Rachmady, Marc C. French, Seung Hoon Sung +2 more | 2022-09-20 |
| 11444205 | Contact stacks to reduce hydrogen in thin film transistor | Arnab Sen Gupta, Benjamin Chu-Kung, Abhishek A. Sharma, Van H. Le, Miriam Reshotko +7 more | 2022-09-13 |
| 11444159 | Field effect transistors with wide bandgap materials | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Cheng-Ying Huang, Harold W. Kennel +3 more | 2022-09-13 |
| 11444024 | Subtractively patterned interconnect structures for integrated circuits | Kevin Lin, Noriyuki Sato, Tristan A. Tronic, Michael Christenson, Christopher J. Jezewski +10 more | 2022-09-13 |
| 11417770 | Vertical thin-film transistors between metal layers | Abhishek A. Sharma, Nazila Haratipour, Seung Hoon Sung, Benjamin Chu-Kung, Gilbert Dewey +5 more | 2022-08-16 |
| 11417655 | High-mobility semiconductor source/drain spacer | Gilbert Dewey, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Chandra S. Mohapatra +2 more | 2022-08-16 |
| 11404562 | Tunneling field effect transistors | Cheng-Ying Huang, Willy Rachmady, Ashish Agrawal, Benjamin Chu-Kung, Uygar E. Avci +2 more | 2022-08-02 |
| 11367789 | Source/drain recess etch stop layers and bottom wide-gap cap for III-V MOSFETs | Cheng-Ying Huang, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros, Sean T. Ma +1 more | 2022-06-21 |
| 11355621 | Non-planar semiconductor device including a replacement channel structure | Gilbert Dewey, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo, Tahir Ghani +2 more | 2022-06-07 |
| 11335796 | Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Willy Rachmady, Gilbert Dewey, Sean T. Ma, Jack T. Kavalieros | 2022-05-17 |
| 11335793 | Vertical tunneling field-effect transistors | Cheng-Ying Huang, Jack T. Kavalieros, Ian A. Young, Willy Rachmady, Uygar E. Avci +2 more | 2022-05-17 |
| 11296229 | Vertical thin film transistors having self-aligned contacts | Abhishek A. Sharma, Yih Wang, Van H. Le, Jack T. Kavalieros, Tahir Ghani +5 more | 2022-04-05 |
| 11276755 | Field effect transistors with gate electrode self-aligned to semiconductor fin | Sean T. Ma, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +2 more | 2022-03-15 |
| 11276694 | Transistor structure with indium phosphide channel | Willy Rachmady, Gilbert Dewey, Nicholas G. Minutillo, Cheng-Ying Huang, Jack T. Kavalieros +2 more | 2022-03-15 |
| 11257904 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more | 2022-02-22 |
| 11205707 | Optimizing gate profile for performance and gate fill | Nadia M. Rahhal-Orabi, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros, Gilbert Dewey +2 more | 2021-12-21 |
| 11195924 | Broken bandgap contact | Benjamin Chu-Kung, Van H. Le, Jack T. Kavalieros, Willy Rachmady, Ashish Agrawal +1 more | 2021-12-07 |
| 11177255 | Transistor structures having multiple threshold voltage channel materials | Sean T. Ma, Willy Rachmady, Gilbert Dewey, Harold W. Kennel, Cheng-Ying Huang +3 more | 2021-11-16 |
| 11171207 | Transistor with isolation below source and drain | Willy Rachmady, Cheng-Ying Huang, Nicholas G. Minutillo, Sean T. Ma, Anand S. Murthy +3 more | 2021-11-09 |
| 11164747 | Group III-V semiconductor devices having asymmetric source and drain structures | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Cheng-Ying Huang +3 more | 2021-11-02 |
| 11164974 | Channel layer formed in an art trench | Willy Rachmady, Gilbert Dewey, Nancy Zelick, Harold W. Kennel, Nicholas G. Minutillo +1 more | 2021-11-02 |
| 11152290 | Wide bandgap group IV subfin to reduce leakage | Benjamin Chu-Kung, Van H. Le, Willy Rachmady, Jack T. Kavalieros, Ashish Agrawal +1 more | 2021-10-19 |
| 11107890 | FINFET transistor having a doped subfin structure to reduce channel to substrate leakage | Gilbert Dewey, Willy Rachmady, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani +2 more | 2021-08-31 |