Issued Patents All Time
Showing 26–50 of 89 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10121856 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Tahir Ghani, Anand S. Murthy, Mark Armstrong, Rafael Rios +2 more | 2018-11-06 |
| 10115822 | Methods of forming low band gap source and drain structures in microelectronic devices | Rafael Rios, Roza Kotlyar | 2018-10-30 |
| 10109711 | CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel | Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Glenn A. Glass +1 more | 2018-10-23 |
| 10074357 | Integrated acoustic phase array | Sasikanth Manipatruni, Debendra Mallik, John C. Johnson | 2018-09-11 |
| 10074573 | CMOS nanowire structure | Seiyon Kim, Tahir Ghani, Anand S. Murthy, Annalisa Cappellani, Stephen M. Cea +2 more | 2018-09-11 |
| 10026829 | Semiconductor device with isolated body portion | Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Jack T. Kavalieros +5 more | 2018-07-17 |
| 9978636 | Isolated and bulk semiconductor devices formed on a same bulk substrate | Annalisa Cappellani, Rafael Rios, Harry Gomez | 2018-05-22 |
| 9947805 | Nanowire-based mechanical switching device | Chytra Pawashe, Kevin Lin, Anurag Chaudhry, Raseong Kim, Seiyon Kim +3 more | 2018-04-17 |
| 9935107 | CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same | Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Tahir Ghani | 2018-04-03 |
| 9935205 | Internal spacers for nanowire transistors and method of fabrication thereof | Seiyon Kim, Daniel A. Simon, Nadia M. Rahhal-Orabi, Chul-Hyun Lim | 2018-04-03 |
| 9926193 | Magnetic nanomechanical devices for stiction compensation | Jorge Munoz, Dmitri E. Nikonov, Patrick Theofanis, Chytra Pawashe, Kevin Lin +1 more | 2018-03-27 |
| 9911835 | Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs | Roza Kotlyar, Stephen M. Cea, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci +4 more | 2018-03-06 |
| 9893167 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Daniel A. Simon, Curtis W. Ward | 2018-02-13 |
| 9882053 | Molded dielectric fin-based nanostructure | Seiyon Kim | 2018-01-30 |
| 9859368 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Tahir Ghani, Anand S. Murthy, Mark Armstrong, Rafael Rios +2 more | 2018-01-02 |
| 9825130 | Leakage reduction structures for nanowire transistors | Seiyon Kim, Rafael Rios, Mark Armstrong | 2017-11-21 |
| 9812524 | Nanowire transistor devices and forming techniques | Glenn A. Glass, Seiyon Kim, Anand S. Murthy, Daniel B. Aubertine | 2017-11-07 |
| 9691843 | Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition | Annalisa Cappellani, Peter G. Tolchinsky, Glenn A. Glass, Van H. Le | 2017-06-27 |
| 9680013 | Non-planar device having uniaxially strained semiconductor body and method of making same | Stephen M. Cea, Roza Kotlyar, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani +2 more | 2017-06-13 |
| 9673302 | Conversion of strain-inducing buffer to electrical insulator | Annalisa Cappellani, Van H. Le, Glenn A. Glass, Stephen M. Cea | 2017-06-06 |
| 9614060 | Nanowire transistor with underlayer etch stops | Seiyon Kim, Daniel B. Aubertine, Anand S. Murthy | 2017-04-04 |
| 9608059 | Semiconductor device with isolated body portion | Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Jack T. Kavalieros +5 more | 2017-03-28 |
| 9595581 | Silicon and silicon germanium nanowire structures | Seiyon Kim, Rafael Rios, Stephen M. Cea, Martin D. Giles, Annalisa Cappellani +3 more | 2017-03-14 |
| 9583602 | Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs | Roza Kotlyar, Stephen M. Cea, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci +4 more | 2017-02-28 |
| 9583491 | CMOS nanowire structure | Seiyon Kim, Tahir Ghani, Anand S. Murthy, Annalisa Cappellani, Stephen M. Cea +2 more | 2017-02-28 |