Issued Patents All Time
Showing 501–525 of 625 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7713803 | Mechanism for forming a remote delta doping layer of a quantum well structure | Been-Yih Jin, Suman Datta, Amlan Majumdar, Robert S. Chau | 2010-05-11 |
| 7709909 | Method for making a semiconductor device having a high-k gate dielectric | Mark L. Doczy, Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin K. Brask +4 more | 2010-05-04 |
| 7709312 | Methods for inducing strain in non-planar transistor structures | Been-Yih Jin, Brian S. Doyle, Uday Shah | 2010-05-04 |
| 7704835 | Method of forming a selective spacer in a semiconductor device | Rajwinder Singh, Willy Rachmady, Uday Shah | 2010-04-27 |
| 7704833 | Method of forming abrupt source drain metal gate transistors | Nick Lindert, Suman Datta, Mark L. Doczy, Matthew V. Metz, Justin K. Brask +3 more | 2010-04-27 |
| 7700470 | Selective anisotropic wet etching of workfunction metal for semiconductor devices | Willy Rachmady, Uday Shah, Brian S. Doyle | 2010-04-20 |
| 7671471 | Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode | Justin K. Brask, Mark L. Doczy, Uday Shah, Chris Barns, Matthew V. Metz +3 more | 2010-03-02 |
| 7642603 | Semiconductor device with reduced fringe capacitance | Suman Datta, Titash Rakshit, Brian S. Doyle | 2010-01-05 |
| 7638169 | Directing carbon nanotube growth | Marko Radosavljevic, Amlan Majumdar, Suman Datta | 2009-12-29 |
| 7629603 | Strain-inducing semiconductor regions | Chi On Chui, Prashant Majhi, Wilman Tsai | 2009-12-08 |
| 7629643 | Independent n-tips for multi-gate transistors | Ravi Pillarisetty, Suman Datta, Brian S. Doyle | 2009-12-08 |
| 7615441 | Forming high-k dielectric layers on smooth substrates | Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Suman Datta, Uday Shah +2 more | 2009-11-10 |
| 7601980 | Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures | Mantu K. Hudait, Aaron A. Budrevich, Dmitri Loubychev, Suman Datta, Joel M. Fastenau +1 more | 2009-10-13 |
| 7598560 | Hetero-bimos injection process for non-volatile flash memory | Suman Datta, Robert S. Chau, David L. Kencke | 2009-10-06 |
| 7595248 | Angled implantation for removal of thin film layers | Michael L. Hattendorf, Justin K. Brask, Justin S. Sandford, Matthew V. Metz | 2009-09-29 |
| 7592213 | Tensile strained NMOS transistor using group III-N source/drain regions | Suman Datta, Justin K. Brask, Been-Yih Jin, Mantu K. Hudait | 2009-09-22 |
| 7575991 | Removing a high-k gate dielectric | Mark L. Doczy, Robert Norman, Justin K. Brask, Matthew V. Metz, Suman Datta +1 more | 2009-08-18 |
| 7569443 | Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate | Annalisa Cappellani, Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Suman Datta +2 more | 2009-08-04 |
| 7569857 | Dual crystal orientation circuit devices on the same substrate | Mohamad A. Shaheen, Brian S. Doyle, Suman Datta, Peter G. Tolchinsky | 2009-08-04 |
| 7569869 | Transistor having tensile strained channel and system including same | Been-Yih Jin, Robert S. Chau, Suman Datta, Marko Radosavlievic | 2009-08-04 |
| 7566605 | Epitaxial silicon germanium for reduced contact resistance in field-effect transistors | Lucian Shifren, Steven M. Cea, Cory E. Weber, Justin K. Brask | 2009-07-28 |
| 7560756 | Tri-gate devices and methods of fabrication | Robert S. Chau, Brian S. Doyle, Douglas Barlage, Suman Datta | 2009-07-14 |
| 7547637 | Methods for patterning a semiconductor film | Justin K. Brask, Uday Shah, Suman Datta, Amlan Majumdar, Robert S. Chau +1 more | 2009-06-16 |
| 7545003 | Defect-free source/drain extensions for MOSFETS having germanium based channel regions | Prashant Majhi, William Tsai | 2009-06-09 |
| 7531437 | Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material | Justin K. Brask, Brian S. Doyle, Mark L. Doczy, Uday Shah, Robert S. Chau | 2009-05-12 |