Issued Patents All Time
Showing 451–475 of 625 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8088665 | Method of forming self-aligned low resistance contact layer | Willy Rachmady, Jason W. Klaus, Ravi Pillarisetty, Niloy Mukherjee, Sean King | 2012-01-03 |
| 8071983 | Semiconductor device structures and methods of forming semiconductor structures | Justin K. Brask, Uday Shah, Suman Datta, Amlan Majumdar, Robert S. Chau +1 more | 2011-12-06 |
| 8063447 | Multiple-gate transistors and processes of making same | Ravi Pillarisetty, Marko Radosavljevic, Benjamin Chu-Kung | 2011-11-22 |
| 8030163 | Reducing external resistance of a multi-gate device using spacer processing techniques | Ravi Pillarisetty, Uday Shah, Brian S. Doyle | 2011-10-04 |
| 8026509 | Tunnel field effect transistor and method of manufacturing same | Niti Goel, Wilman Tsai | 2011-09-27 |
| 8021940 | Methods for fabricating PMOS metal gate structures | Matthew V. Metz, Mark L. Doczy, Gilbert Dewey | 2011-09-20 |
| 8022487 | Increasing body dopant uniformity in multi-gate transistor devices | Ravi Pillarisetty, Titash Rakshit, Gilbert Dewey, Willy Rachmady | 2011-09-20 |
| 7999298 | Embedded memory cell and method of manufacturing same | Niloy Mukherjee, Gilbert Dewey, Dinesh Somasekhar, Brian S. Doyle | 2011-08-16 |
| 7989280 | Dielectric interface for group III-V semiconductor device | Justin K. Brask, Suman Datta, Mark L. Doczy, James M. Blackwell, Matthew V. Metz +1 more | 2011-08-02 |
| 7973389 | Isolated tri-gate transistor fabricated on bulk substrate | Rafael Rios, Stephen M. Cea | 2011-07-05 |
| 7968457 | Sandwiched metal structure silicidation for enhanced contact | Niloy Mukherjee, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Robert S. Chau | 2011-06-28 |
| 7951673 | Forming abrupt source drain metal gate transistors | Nick Lindert, Suman Datta, Mark L. Doczy, Matthew V. Metz, Justin K. Brask +3 more | 2011-05-31 |
| 7947971 | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains | Prashant Majhi, Mantu K. Hudait, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +2 more | 2011-05-24 |
| 7936025 | Metalgate electrode for PMOS transistor | Robert S. Chau, Mark L. Doczy, Brian S. Doyle | 2011-05-03 |
| 7928426 | Forming a non-planar transistor having a quantum well channel | Chi On Chui, Prashant Majhi, Wilman Tsai | 2011-04-19 |
| 7928468 | Buffer structure for semiconductor device and methods of fabrication | Prashant Majhi, Wilman Tsai | 2011-04-19 |
| 7915642 | Apparatus and methods for forming a modulation doped non-planar transistor | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Gilbert Dewey | 2011-03-29 |
| 7915167 | Fabrication of channel wraparound gate structure for field-effect transistor | Marko Radosavljevic, Amlan Majumdar, Suman Datta, Brian S. Doyle, Justin K. Brask +1 more | 2011-03-29 |
| 7902014 | CMOS devices with a single work function gate electrode and method of fabrication | Brian S. Doyle, Been-Yih Jin, Suman Datta, Justin K. Brask, Robert S. Chau | 2011-03-08 |
| 7902058 | Inducing strain in the channels of metal gate transistors | Suman Datta, Mark L. Doczy, Matthew V. Metz, Justin K. Brask, Robert S. Chau +1 more | 2011-03-08 |
| 7898041 | Block contact architectures for nanoscale channel transistors | Marko Radosavljevic, Amlan Majumdar, Brian S. Doyle, Mark L. Doczy, Justin K. Brask +3 more | 2011-03-01 |
| 7893506 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2011-02-22 |
| 7888221 | Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions | Matthew V. Metz, Gilbert Dewey, Been-Yih Jin, Justin K. Brask, Suman Datta +1 more | 2011-02-15 |
| 7883951 | CMOS device with metal and silicide gate electrodes and a method for making it | Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Chris Barns, Uday Shah +3 more | 2011-02-08 |
| 7879739 | Thin transition layer between a group III-V substrate and a high-k gate dielectric layer | Willy Rachmady, James M. Blackwell, Suman Datta, Mantu K. Hudait | 2011-02-01 |