Issued Patents All Time
Showing 426–450 of 625 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8294180 | CMOS devices with a single work function gate electrode and method of fabrication | Brian S. Doyle, Been-Yih Jin, Suman Datta, Justin K. Brask, Robert S. Chau | 2012-10-23 |
| 8288233 | Method to introduce uniaxial strain in multigate nanoscale transistors by self aligned SI to SIGE conversion processes and structures formed thereby | Been-Yih Jin, Brian S. Doyle, Suman Datta | 2012-10-16 |
| 8283653 | Non-planar germanium quantum well devices | Ravi Pillarisetty, Willy Rachmady, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more | 2012-10-09 |
| 8269283 | Methods and apparatus to reduce layout based strain variations in non-planar transistor structures | Stephen M. Cea, Martin D. Giles, Kelin J. Kuhn, Markus Kuhn | 2012-09-18 |
| 8264004 | Mechanism for forming a remote delta doping layer of a quantum well structure | Been-Yih Jin, Suman Datta, Amlan Majumdar, Robert S. Chau | 2012-09-11 |
| 8264048 | Multi-gate device having a T-shaped gate structure | Willy Rachmady, Uday Shah | 2012-09-11 |
| 8258498 | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains | Prashant Majhi, Mantu K. Hudait, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +2 more | 2012-09-04 |
| 8237153 | Forming a non-planar transistor having a quantum well channel | Chi On Chui, Prashant Majhi, Wilman Tsai | 2012-08-07 |
| 8217383 | High hole mobility p-channel Ge transistor structure on Si substrate | Mantu K. Hudait, Suman Datta, Peter G. Tolchinsky | 2012-07-10 |
| 8211772 | Two-dimensional condensation for uniaxially strained semiconductor fins | Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea | 2012-07-03 |
| 8211771 | Multiple-gate transistors and processes of making same | Ravi Pillarisetty, Marko Radosavljevic, Benjamin Chu-Kung | 2012-07-03 |
| 8193523 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Marko Radosavljevic +5 more | 2012-06-05 |
| 8193567 | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby | Justin K. Brask, Brian S. Doyle, Uday Shah, Suman Datta, Mark L. Doczy +2 more | 2012-06-05 |
| 8183646 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2012-05-22 |
| 8183556 | Extreme high mobility CMOS logic | Suman Datt{dot over (a)}, Mantu K. Hudait, Mark L. Doczy, Majumdar Amlan, Justin K. Brask +3 more | 2012-05-22 |
| 8169027 | Substrate band gap engineered multi-gate pMOS devices | Brian S. Doyle, Been-Yih Jin, Suman Datta | 2012-05-01 |
| 8148786 | Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate | Annalisa Cappellani, Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Suman Datta +2 more | 2012-04-03 |
| 8129749 | Double quantum well structures for transistors | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit | 2012-03-06 |
| 8129795 | Inducing strain in the channels of metal gate transistors | Suman Datta, Mark L. Doczy, Matthew V. Metz, Justin K. Brask, Robert S. Chau +1 more | 2012-03-06 |
| 8120073 | Trigate transistor having extended metal gate electrode | Titash Rakshit, Stephen M. Cea, Ravi Pillarisetty | 2012-02-21 |
| 8120065 | Tensile strained NMOS transistor using group III-N source/drain regions | Suman Datta, Justin K. Brask, Been-Yih Jin, Mantu K. Hudait | 2012-02-21 |
| 8120063 | Modulation-doped multi-gate devices | Mantu K. Hudait, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey | 2012-02-21 |
| 8119508 | Forming integrated circuits with replacement metal gate electrodes | Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Suman Datta, Uday Shah +1 more | 2012-02-21 |
| 8110877 | Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions | Niloy Mukherjee, Gilbert Dewey, Matthew V. Metz, Robert S. Chau | 2012-02-07 |
| 8110458 | Fabrication of germanium nanowire transistors | Been-Yih Jin, Matthew V. Metz, Marko Radosavlievic, Robert S. Chau | 2012-02-07 |