Issued Patents All Time
Showing 476–500 of 625 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7879675 | Field effect transistor with metal source/drain regions | Marko Radosavljevic, Suman Datta, Brian S. Doyle, Justin K. Brask, Mark L. Doczy +2 more | 2011-02-01 |
| 7875937 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Matthew V. Metz, Suman Datta, Mark L. Doczy, Justin K. Brask, Robert S. Chau | 2011-01-25 |
| 7863710 | Dislocation removal from a group III-V film grown on a semiconductor substrate | Mantu K. Hudait, Peter G. Tolchinsky, Marko Radosavljevic | 2011-01-04 |
| 7858481 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more | 2010-12-28 |
| 7851291 | Epitaxial silicon germanium for reduced contact resistance in field-effect transistors | Lucian Shifren, Steven M. Cea, Cory E. Weber, Justin K. Brask | 2010-12-14 |
| 7838373 | Replacement spacers for MOSFET fringe capacitance reduction and processes of making same | Martin D. Giles, Titash Rakshit, Lucian Shifren, Willy Rachmady | 2010-11-23 |
| 7833889 | Apparatus and methods for improving multi-gate device performance | Ravi Pillarisetty, Brian S. Doyle, Titash Rakshit | 2010-11-16 |
| 7833887 | Notched-base spacer profile for non-planar transistors | Willy Rachmady | 2010-11-16 |
| 7825481 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2010-11-02 |
| 7825400 | Strain-inducing semiconductor regions | Suman Datta, Been-Yih Jin | 2010-11-02 |
| 7825437 | Unity beta ratio tri-gate transistor static random access memory (SRAM) | Ravi Pillarisetty, Suman Datta, Brian S. Doyle, Uday Shah | 2010-11-02 |
| 7820512 | Spacer patterned augmentation of tri-gate transistor gate length | Ravi Pillarisetty, Suman Datta, Brian S. Doyle, Uday Shah | 2010-10-26 |
| 7821061 | Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications | Been-Yih Jin, Brian S. Doyle, Robert S. Chau | 2010-10-26 |
| 7790536 | Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures | Mantu K. Hudait, Aaron A. Budrevich, Dmitri Loubychev, Suman Datta, Joel M. Fastenau +1 more | 2010-09-07 |
| 7791063 | High hole mobility p-channel Ge transistor structure on Si substrate | Mantu K. Hudait, Suman Datta, Peter G. Tolchinsky | 2010-09-07 |
| 7785958 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Mark L. Doczy, Justin K. Brask, Uday Shah, Matthew V. Metz, Suman Datta +2 more | 2010-08-31 |
| 7777282 | Self-aligned tunneling pocket in field-effect transistors and processes to form same | Prashant Majhi, Wilman Tsai, Ravi Pillarisetty, Benjamin Chu-Kung | 2010-08-17 |
| 7767560 | Three dimensional strained quantum wells and three dimensional strained surface channels by Ge confinement method | Been-Yih Jin, Robert S. Chau, Brian S. Doyle | 2010-08-03 |
| 7763943 | Reducing external resistance of a multi-gate device by incorporation of a partial metallic fin | Ravi Pillarisetty, Uday Shah, Titash Rakshit, Brian S. Doyle | 2010-07-27 |
| 7759142 | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains | Prashant Majhi, Mantu K. Hudait, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +2 more | 2010-07-20 |
| 7745270 | Tri-gate patterning using dual layer gate stack | Uday Shah, Brian S. Doyle, Been-Yih Jin | 2010-06-29 |
| 7741230 | Highly-selective metal etchants | Willy Rachmady, Mark Liu, Mark L. Doczy | 2010-06-22 |
| 7736956 | Lateral undercut of metal gate in SOI device | Suman Datta, Justin K. Brask, Brian S. Doyle, Gilbert Dewey, Mark L. Doczy +1 more | 2010-06-15 |
| 7727830 | Fabrication of germanium nanowire transistors | Been-Yih Jin, Matthew V. Metz, Marko Radosavlievic, Robert S. Chau | 2010-06-01 |
| 7718479 | Forming integrated circuits with replacement metal gate electrodes | Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Suman Datta, Uday Shah +1 more | 2010-05-18 |