Issued Patents All Time
Showing 25 most recent of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8735946 | Substrate having a charged zone in an insulating buried layer | Frédéric Allibert, Gweltaz Gaudin, Fabrice Lallement, Didier Landru, Karine Landry +1 more | 2014-05-27 |
| 8617945 | Stacking fault and twin blocking barrier for integrating III-V on Si | Mantu K. Hudait, Loren A. Chow, Peter G. Tolchinsky, Joel M. Fastenau, Dmitri Loubychev +1 more | 2013-12-31 |
| 8535996 | Substrate having a charged zone in an insulating buried layer | Frédéric Allibert, Gweltaz Gaudin, Fabrice Lallement, Didier Landru, Karin Landry +1 more | 2013-09-17 |
| 8143646 | Stacking fault and twin blocking barrier for integrating III-V on Si | Mantu K. Hudait, Loren A. Chow, Peter G. Tolchinsky, Joel M. Fastenau, Dmitri Loubychev +1 more | 2012-03-27 |
| 8084818 | High mobility tri-gate devices and methods of fabrication | Brian S. Doyle, Suman Dutta, Robert S. Chau, Peter Tolchinksy | 2011-12-27 |
| 8034675 | Semiconductor buffer architecture for III-V devices on silicon substrates | Mantu K. Hudait, Dmitri Loubychev, Amy W. K. Liu, Joel M. Fastenau | 2011-10-11 |
| 7851780 | Semiconductor buffer architecture for III-V devices on silicon substrates | Mantu K. Hudait, Dmitri Loubychev, Amy W. K. Liu, Joel M. Fastenau | 2010-12-14 |
| 7851781 | Buffer layers for device isolation of devices grown on silicon | Mantu K. Hudait, Loren A. Chow, Peter G. Tolchinsky, Joel M. Fastenau, Dmitri Loubychev +1 more | 2010-12-14 |
| 7723749 | Strained semiconductor structures | — | 2010-05-25 |
| 7670928 | Ultra-thin oxide bonding for S1 to S1 dual orientation bonding | Willy Rachmady, Peter G. Tolchinsky | 2010-03-02 |
| 7573059 | Dislocation-free InSb quantum well structure on Si using novel buffer architecture | Mantu K. Hudait, Loren A. Chow, Peter G. Tolchinsky, Dmitri Loubychev, Joel M. Fastenau +1 more | 2009-08-11 |
| 7569857 | Dual crystal orientation circuit devices on the same substrate | Jack T. Kavalieros, Brian S. Doyle, Suman Datta, Peter G. Tolchinsky | 2009-08-04 |
| 7494911 | Buffer layers for device isolation of devices grown on silicon | Mantu K. Hudait, Loren A. Chow, Peter G. Tolchinsky, Joel M. Fastenau, Dmitri Loubychev +1 more | 2009-02-24 |
| 7473614 | Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer | Peter G. Tolchinsky, Martin D. Giles, Michael L. McSwiney, Irwin Yablok | 2009-01-06 |
| 7378331 | Methods of vertically stacking wafers using porous silicon | Peter G. Tolchinsky, Irwin Yablok, Scott R. List | 2008-05-27 |
| 7355247 | Silicon on diamond-like carbon devices | Kramadhati V. Ravi | 2008-04-08 |
| 7279369 | Germanium on insulator fabrication via epitaxial germanium bonding | Ryan Lei | 2007-10-09 |
| 7202503 | III-V and II-VI compounds as template materials for growing germanium containing film on silicon | Loren A. Chow | 2007-04-10 |
| 7161224 | Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process | Peter G. Tolchinsky, Ryan Lei, Irwin Yablok | 2007-01-09 |
| 7157379 | Strained semiconductor structures | — | 2007-01-02 |
| 7148122 | Bonding of substrates | Ryan Lei, Maxim Kelman | 2006-12-12 |
| 7052978 | Arrangements incorporating laser-induced cleaving | Mark Liu, Mitchell Taylor | 2006-05-30 |
| 7042009 | High mobility tri-gate devices and methods of fabrication | Brian S. Doyle, Suman Dutta, Robert S. Chau, Peter G. Tolchinsky | 2006-05-09 |
| 6911380 | Method of forming silicon on insulator wafers | Peter G. Tolchinsky, Irwin Yablok | 2005-06-28 |
| 6908027 | Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process | Peter G. Tolchinsky, Ryan Lei, Irwin Yablok | 2005-06-21 |