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Semiconductor structure comprising a buried porous layer for RF applications |
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Support for a semiconductor structure |
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Method for dissolving a buried oxide in a silicon-on-insulator wafer |
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Method for minimizing distortion of a signal in a radiofrequency circuit |
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Method for manufacturing a high-resistivity semiconductor-on-insulator substrate including an RF circuit overlapping a doped region in the substrate |
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Method for fabricating a semiconductor device including fin relaxation, and related structures |
Pierre Morin |
2017-04-11 |
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Matching of transistors |
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Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications |
Julie Widiez |
2015-09-08 |
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Locally passivated germanium-on-insulator substrate |
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2015-07-07 |
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Charge reservoir structure |
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2014-08-12 |
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Method of manufacturing a base substrate for a semi-conductor on insulator type substrate |
Oleg Kononchuk |
2014-07-01 |
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Substrate having a charged zone in an insulating buried layer |
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Substrate having a charged zone in an insulating buried layer |
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Method for fabricating a locally passivated germanium-on-insulator substrate |
Thomas Signamarcheix, Chrystel Deguet |
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Process for manufacturing a composite substrate |
Sebastien Kerdiles |
2012-04-10 |
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Method and apparatus for measuring a lifetime of charge carriers |
Oleg Kononchuk |
2011-08-30 |
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Composite substrate and method of fabricating the same |
Sebastien Kerdiles |
2011-07-12 |
| 7790048 |
Treatment of the working layer of a multilayer structure |
Francois Brunier |
2010-09-07 |
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Composite substrate and method of fabricating the same |
Sebastien Kerdiles |
2010-06-15 |
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Multi-gate FET with multi-layer channel |
Takeshi Akatsu, Bruno Ghyselen |
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Method of fabricating a composite substrate with improved electrical properties |
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2008-11-11 |
