Issued Patents All Time
Showing 251–275 of 396 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10263079 | Apparatus and methods for forming a modulation doped non-planar transistor | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Jack T. Kavalieros | 2019-04-16 |
| 10249742 | Offstate parasitic leakage reduction for tunneling field effect transistors | Van H. Le, Benjamin Chu-Kung, Ashish Agrawal, Matthew V. Metz, Willy Rachmady +8 more | 2019-04-02 |
| 10249490 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more | 2019-04-02 |
| 10243078 | Carrier confinement for high mobility channel devices | Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani, Anand S. Murthy +3 more | 2019-03-26 |
| 10236369 | Techniques for forming non-planar germanium quantum well devices | Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more | 2019-03-19 |
| 10229997 | Indium-rich NMOS transistor channels | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +3 more | 2019-03-12 |
| 10211208 | High-mobility semiconductor source/drain spacer | Matthew V. Metz, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Chandra S. Mohapatra +2 more | 2019-02-19 |
| 10186581 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more | 2019-01-22 |
| 10181518 | Selective epitaxially grown III-V materials based devices | Niti Goel, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2019-01-15 |
| 10096474 | Methods and structures to prevent sidewall defects during selective epitaxy | Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more | 2018-10-09 |
| 10096709 | Aspect ratio trapping (ART) for fabricating vertical semiconductor devices | Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros, Ravi Pillarisetty, Willy Rachmady +4 more | 2018-10-09 |
| 10090405 | Semiconductor device having group III-V material active region and graded gate dielectric | Marko Radosavljevic, Ravi Pillarisetty, Matthew V. Metz | 2018-10-02 |
| 10084043 | High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin | Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani, Anand S. Murthy +4 more | 2018-09-25 |
| 10084058 | Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains | Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic +2 more | 2018-09-25 |
| 10074718 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack | Marko Radosavljevic, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee | 2018-09-11 |
| 10026845 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2018-07-17 |
| 10020371 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Niloy Mukherjee +3 more | 2018-07-10 |
| 9972686 | Germanium tin channel transistors | Ravi Pillarisetty, Van H. Le, Willy Rachmady, Roza Kotlyar, Marko Radosavljevic +4 more | 2018-05-15 |
| 9947780 | High electron mobility transistor (HEMT) and method of fabrication | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more | 2018-04-17 |
| 9934976 | Methods of forming low interface resistance rare earth metal contacts and structures formed thereby | Niloy Mukherjee, Matt Metz, Jack T. Kavalieros, Robert S. Chau | 2018-04-03 |
| 9929273 | Apparatus and methods of forming fin structures with asymmetric profile | Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Nadia M. Rahhal-Orabi, Tahir Ghani +3 more | 2018-03-27 |
| 9911835 | Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs | Roza Kotlyar, Stephen M. Cea, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more | 2018-03-06 |
| 9905651 | GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more | 2018-02-27 |
| 9899505 | Conductivity improvements for III-V semiconductor devices | Marko Radosavljevic, Prashant Majhi, Jack T. Kavalieros, Niti Goel, Wilman Tsai +3 more | 2018-02-20 |
| 9876014 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2018-01-23 |