Issued Patents All Time
Showing 226–250 of 396 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10580882 | Low band gap semiconductor devices having reduced gate induced drain leakage (GIDL) | Jack T. Kavalieros, Willy Rachmady, Matthew V. Metz, Van H. Le, Seiyon Kim +1 more | 2020-03-03 |
| 10573717 | Selective epitaxially grown III-V materials based devices | Niti Goel, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2020-02-25 |
| 10559683 | Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +2 more | 2020-02-11 |
| 10546858 | Low damage self-aligned amphoteric FINFET tip doping | Jack T. Kavalieros, Chandra S. Mohapatra, Anand S. Murthy, Willy Rachmady, Matthew V. Metz +2 more | 2020-01-28 |
| 10541305 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more | 2020-01-21 |
| 10529808 | Dopant diffusion barrier for source/drain to curb dopant atom diffusion | Chandra S. Mohapatra, Harold W. Kennel, Glenn A. Glass, Will Rachmady, Jack T. Kavalieros +4 more | 2020-01-07 |
| 10497814 | III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same | Harold W. Kennel, Matthew V. Metz, Willy Rachmady, Chandra S. Mohapatra, Anand S. Murthy +2 more | 2019-12-03 |
| 10483353 | Transistor including tensile-strained germanium channel | Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady +2 more | 2019-11-19 |
| 10461082 | Well-based integration of heteroepitaxial N-type transistors with P-type transistors | Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +2 more | 2019-10-29 |
| 10461193 | Apparatus and methods to create a buffer which extends into a gated region of a transistor | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Jack T. Kavalieros +2 more | 2019-10-29 |
| 10446685 | High-electron-mobility transistors with heterojunction dopant diffusion barrier | Chandra S. Mohapatra, Matthew V. Metz, Harold W. Kennel, Willy Rachmady, Anand S. Murthy +2 more | 2019-10-15 |
| 10431690 | High electron mobility transistors with localized sub-fin isolation | Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +3 more | 2019-10-01 |
| 10411007 | High mobility field effect transistors with a band-offset semiconductor source/drain spacer | Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more | 2019-09-10 |
| 10411122 | Semiconductor device having group III-V material active region and graded gate dielectric | Marko Radosavljevic, Ravi Pillarisetty, Matthew V. Metz | 2019-09-10 |
| 10403733 | Dielectric metal oxide cap for channel containing germanium | Ashish Agrawal, Benjamin Chu-Kung, Van H. Le, Matthew V. Metz, Willy Rachmady +2 more | 2019-09-03 |
| 10388764 | High-electron-mobility transistors with counter-doped dopant diffusion barrier | Chandra S. Mohapatra, Harold W. Kennel, Matthew V. Metz, Willy Rachmady, Anand S. Murthy +2 more | 2019-08-20 |
| 10388800 | Thin film transistor with gate stack on multiple sides | Seung Hoon Sung, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani | 2019-08-20 |
| 10373977 | Transistor fin formation via cladding on sacrificial core | Glenn A. Glass, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +4 more | 2019-08-06 |
| 10347767 | Transistor with a subfin layer | Willy Rachmady, Matthew V. Metz, Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros +1 more | 2019-07-09 |
| 10340374 | High mobility field effect transistors with a retrograded semiconductor source/drain | Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more | 2019-07-02 |
| 10340275 | Stackable thin film memory | Elijah V. Karpov, Jack T. Kavalieros, Robert S. Chau, Niloy Mukherjee, Rafael Rios +5 more | 2019-07-02 |
| 10319646 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros, Willy Rachmady +4 more | 2019-06-11 |
| 10290614 | Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits | Han Wui Then, Robert S. Chau, Valluri Rao, Niloy Mukherjee, Marko Radosavljevic +2 more | 2019-05-14 |
| 10290709 | Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani, Willy Rachmady +2 more | 2019-05-14 |
| 10263074 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more | 2019-04-16 |